Patents Assigned to Krysalis Corporation
  • Patent number: 4759823
    Abstract: A method for etching thin films of compostions from the PLZT family which have been deposited on substrates. The film is coated with a photosensitive material which is developed by photolithographic techniques to form a photoresist mask upon the film layer, the photoresist material having a predetermined pattern. The thin film coated substrate with the developed photoresist mask is immersed in a dilute etching solution containing hydrochloric acid and fluorine ion donor for a period of time sufficient to etch that portion of the thin film layer not covered with the developed photoresist, removing the thin film coated substrate after it has been etched, rinsing the substrate and then immersing the substrate in a second etching solution containing a dilute solution of a lead solubilizing medium such as nitric acid, or acetic for a period of time sufficient to remove lead residue remaining from the first etching step.
    Type: Grant
    Filed: June 2, 1987
    Date of Patent: July 26, 1988
    Assignee: Krysalis Corporation
    Inventors: Dino Asselanis, Sylvia D. Mancha