Abstract: A film structure (10) includes a substrate (11), a piezoelectric film (14) formed on the substrate (11) and containing first composite oxide represented by a composition formula Pb(Zr1-xTix)O3, and a piezoelectric film (15) formed on the piezoelectric film (14) and containing second composite oxide represented by a composition formula Pb(Zr1-yTiy)O3. In the composition formulae, x satisfies 0.10<x?0.20, and y satisfies 0.35?y?0.55. The piezoelectric film (14) has tensile stress, and the piezoelectric film (15) has compressive stress.
Abstract: A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.