Abstract: A method of operating a wire bonding machine is provided. The method includes: detecting a short tail condition after formation of a wire bond formed using a wire bonding tool; providing a bond head assembly of a wire bonding machine at an xy location of the wire bonding machine, the bond head assembly carrying the wire bonding tool; lowering the bond head assembly toward a contact surface at the xy location with a wire clamp of the wire bonding machine closed; opening the wire clamp; decelerating the bond head assembly as it is lowered toward the contact surface such that a portion of a wire extends below a tip of the wire bonding tool; closing the wire clamp; and performing a test to determine if an end of the portion of the wire extending below the tip of the bonding tool is in contact with the contact surface.

Abstract: A method of adjusting ultrasonic bonding energy on a wire bonding machine, the method comprising the steps of: providing a reference relationship between free air ball squash and ultrasonic bonding energy; determining an actual relationship between free air ball squash and ultrasonic bonding energy on a subject wire bonding machine; and adjusting at least one ultrasonic bonding energy setting of the subject wire bonding machine such that the actual relationship of the subject wire bonding machine is closer to the reference relationship.

Abstract: A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure configured to support a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; and a calibration tool including a contact portion configured to be positioned between the bonding tool and the support structure, the contact portion configured to be contacted by each of the bonding tool and the support structure simultaneously during a calibration operation.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.

Abstract: A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

Abstract: A method of operating a wire bonding machine is provided. The method includes: detecting a short tail condition after formation of a wire bond formed using a wire bonding tool; providing a bond head assembly of a wire bonding machine at an xy location of the wire bonding machine, the bond head assembly carrying the wire bonding tool; lowering the bond head assembly toward a contact surface at the xy location with a wire clamp of the wire bonding machine closed; opening the wire clamp; decelerating the bond head assembly as it is lowered toward the contact surface such that a portion of a wire extends below a tip of the wire bonding tool; closing the wire clamp; and performing a test to determine if an end of the portion of the wire extending below the tip of the bonding tool is in contact with the contact surface.

Abstract: A method of operating a bonding machine for bonding semiconductor elements is provided. The method includes the steps of: (a) measuring a time based z-axis height measurement characteristic of a bond head assembly during a model bonding process; (b) determining a z-axis adjustment profile for a subsequent bonding process based on the measured time based z-axis height measurement characteristic; and (c) adjusting a z-axis position of the bond head assembly with a z-axis motion system during the subsequent bonding process using the z-axis adjustment profile.

Abstract: A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure configured to support a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; and a calibration tool including a contact portion configured to be positioned between the bonding tool and the support structure, the contact portion configured to be contacted by each of the bonding tool and the support structure simultaneously during a calibration operation.

Abstract: A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure for supporting a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; an alignment structure including first alignment markings; an alignment element configured to be placed on the alignment structure using the bonding tool, the alignment element including second alignment markings; an imaging system configured to image relative positions of the first alignment markings and corresponding ones of the second alignment markings; and a computer system configured to provide an adjustment to a position of at least one of the bonding tool and the support structure during bonding of ones of the plurality of semiconductor elements to the substrate, the computer being configured to provide the adjustment at least partially based on the relative positions of the first alignment markings and the corresponding ones of

Abstract: A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.

Abstract: A method of calibrating a voltage for use with an ultrasonic transducer of a wire bonding machine in a constant voltage mode is provided. The method includes: (1) determining an impedance value associated with operation of the ultrasonic transducer; and (2) establishing an adjusted voltage level for use with the ultrasonic transducer in the constant voltage mode based on the determined impedance value.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Abstract: A method of performing a wire bonding operation is provided. The method includes the steps of: (a) performing a wire bonding operation between a portion of wire and a bonding location using a bonding tool; (b) raising the bonding tool to a desired height; (c) performing a test to determine if the portion of wire is sufficiently bonded to the bonding location; and (d) automatically performing another wire bonding operation between the portion of wire and the bonding location using the bonding tool if, during step (c), it is determined that the portion of wire was not sufficiently bonded to the bonding location in step (a).

Abstract: A method of performing a wire bonding operation is provided. The method includes the steps of: (a) performing a wire bonding operation between a portion of wire and a bonding location using a bonding tool; (b) raising the bonding tool to a desired height; (c) performing a test to determine if the portion of wire is sufficiently bonded to the bonding location; and (d) automatically performing another wire bonding operation between the portion of wire and the bonding location using the bonding tool if, during step (c), it is determined that the portion of wire was not sufficiently bonded to the bonding location in step (a).

Abstract: A method of adjusting ultrasonic bonding energy on a wire bonding machine, the method comprising the steps of: providing a reference relationship between free air ball squash and ultrasonic bonding energy; determining an actual relationship between free air ball squash and ultrasonic bonding energy on a subject wire bonding machine; and adjusting at least one ultrasonic bonding energy setting of the subject wire bonding machine such that the actual relationship of the subject wire bonding machine is closer to the reference relationship.

Abstract: A method of forming a wire loop is provided. The method includes the steps of: (1) forming a conductive bump on a bonding location using a wire bonding tool; (2) bonding a portion of wire to another bonding location using the wire bonding tool; (3) extending a length of wire from the bonded portion of wire toward the bonding location; (4) lowering the bonding tool toward the bonding location while detecting a height of a tip of the wire bonding tool; and (5) interrupting the lowering of the wire bonding tool during step (4) if the wire bonding tool reaches a predetermined height.

Abstract: A method of forming a wire bond using a bonding tool coupled to a transducer is provided. The method includes the steps of: (1) applying electrical energy to a driver of the transducer at a first frequency; and (2) applying electrical energy to the driver at a second frequency concurrently with the application of the electrical energy at the first frequency, the first frequency and the second frequency being different from one another.

Abstract: A method of operating a wire bonding machine is provided. The method includes the steps of: (1) providing a workpiece secured in a bonding position by a device clamp of a wire bonding machine; (2) raising the device clamp to a first height above the workpiece, the device clamp remaining at the first height for a first predetermined period of time; and (3) raising the device clamp to a second height above the workpiece after step (2), the second height being further away from the workpiece than the first height.

Abstract: A wire bonding machine is provided. The wire bonding machine includes a bonding tool and an electrode for forming a free air ball on an end of a wire extending through the bonding tool where the free air ball is formed at a free air ball formation area of the wire bonding machine. The wire bonding machine also includes a bond site area for holding a semiconductor device during a wire bonding operation. The wire bonding machine also includes a gas delivery mechanism configured to provide a cover gas to: (1) the bond site area whereby the cover gas is ejected through at least one aperture of the gas delivery mechanism to the bond site area, and (2) the free air ball formation area.