Abstract: An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10?6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

Abstract: A sputtering cathode includes a magnet having a body of length L1 defining a north magnetic pole at a first end of the body and a south magnetic pole at a second, opposite end of the body. A sputtering target of length L2 surrounds the body of the magnet, but not ends of the magnet.

Abstract: A sputtering cathode includes a magnet array having an outer, ring magnet surrounding an inner, disk magnet. A sputtering target is positioned on one side of the magnet array covering a side of the ring magnet and a side of the disk magnet, and a magnetic keeper disk is positioned between the sputtering target and the disk magnet. A cooling well positioned between the ring magnet and the disk magnet is in contact with part of the sputtering target. One or more cooling tubes is/are coupled to the cooling well. An outer body flange surrounds the one or more cooling tubes and contacts a side of the ring magnet opposite the sputtering target. An inner body flange, surrounded by the outer body flange, contacts a side of the disk magnet opposite the sputtering target.

Abstract: An atomic layer deposition apparatus, including: a chamber with an internal volume; a fixture assembly to hold a substrate within the internal volume of the chamber; a plurality of gas injection ports to facilitate the introduction of gas; at least one precursor gas arrangement to introduce precursor gas into the internal volume; and at least one inactive gas dispersion arrangement to introduce inactive gas into the internal volume. The inactive gas dispersion arrangement is in the form of a primary dispersion member configured to concentrically focus the precursor gas towards a surface of the substrate. A modeling system for an atomic layer deposition apparatus is also disclosed.

Abstract: A sputtering cathode includes a magnet having a body of length L1 defining a north magnetic pole at a first end of the body and a south magnetic pole at a second, opposite end of the body. A sputtering target of length L2 surrounds the body of the magnet, but not ends of the magnet.

Abstract: An atomic layer deposition apparatus, including: a chamber with an internal volume; a fixture assembly to hold a substrate within the internal volume of the chamber; a plurality of gas injection ports to facilitate the introduction of gas; at least one precursor gas arrangement to introduce precursor gas into the internal volume; and at least one inactive gas dispersion arrangement to introduce inactive gas into the internal volume. The inactive gas dispersion arrangement is in the form of a primary dispersion member configured to concentrically focus the precursor gas towards a surface of the substrate. A modeling system for an atomic layer deposition apparatus is also disclosed.

Abstract: Methods of manufacturing a vacuum chamber and methods of forming a port tube for use in connection with a vacuum chamber are provided. Vacuum chambers, bodies, containers, port tubes, and related components made in accordance with these methods are also disclosed. Further, various laser-based arrangements and equipment (or components) that can be used in connection with these methods are further provided.

Abstract: Disclosed is a material deposition system for depositing material onto a surface of a substrate. The system includes a first body element with an interior cavity and an exit aperture extending through the first body element, and a second body element having an interior cavity and an exit aperture extending through the second body element. The interior cavity of the second body element contains the material, and the exit aperture of the second body element is spacially separated from and in fluid communication with the exit aperture of the first body element. The first body element and the second body element are rotatable, such that the exit apertures of the first body element and the second body element can be aligned and misaligned. A material deposition system with novel aperture spacing and separation and methods of coating a substrate and thermally processing a deposition material are also disclosed.

Abstract: A method and apparatus for coating a substrate with a deposition material in a vacuum wherein a material source having a substantially longitudinal deposition emission component is used to create a substantially longitudinal material deposition emission plume which coats the surface of the substrate without increasing the throw distance between the substrate and the material source.