Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
Type:
Grant
Filed:
August 16, 2006
Date of Patent:
April 24, 2007
Assignees:
Samsung Electronics Co., Ltd., Kwang-youl Seo
Inventors:
Hee-soon Chae, Chung-woo Kim, Kwang-youl Seo, Tae-hyun Han, Byung-chul Kim, Joo-yeon Kim
Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
Type:
Application
Filed:
August 16, 2006
Publication date:
December 7, 2006
Applicants:
SAMSUNG ELECTRONICS CO., LTD., KWANG-YOUL SEO
Inventors:
Hee-soon Chae, Chung-woo Kim, Kwang-youl Seo, Tae-hyun Han, Byung-chul Kim, Joo-yeon Kim
Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
Type:
Grant
Filed:
October 29, 2004
Date of Patent:
September 26, 2006
Assignees:
Samsung Electronics Co., Ltd., Kwang-Youl Seo
Inventors:
Hee-soon Chae, Chung-woo Kim, Kwang-youl Seo, Tae-hyun Han, Byung-chul Kim, Joo-yeon Kim
Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
Type:
Application
Filed:
October 29, 2004
Publication date:
July 28, 2005
Applicants:
Samsung Electronics Co., Ltd., Kwang-youl Seo
Inventors:
Hee-soon Chae, Chung-woo Kim, Kwang-youl Seo, Tae-hyun Han, Byung-chul Kim, Joo-yeon Kim