Abstract: Disclosed are a method for manufacturing a porous structure for lithium batteries, a porous structure for lithium batteries manufactured thereby, an anode for lithium batteries including the porous structure for lithium batteries, and a lithium battery including the same.

Abstract: Disclosed is a method of fabricating an optical fiber or an optical device doped with reduced metal ion and/or rare earth ion, comprising steps of: forming a partially-sintered fine structure in a base material for fabricating the optical fiber or the optical device; soaking the fine structure into a doping solution containing a reducing agent together with metal ion and rare earth ion during a selected time; drying the fine structure in which the metal ion and/or rare ion are/is soaked; and heating the fine structure such that the fine structure is sintered.

Abstract: A wavelength division multiplexed-passive optical network includes an optical line terminal for generating downstream optical signals of discrete wavelengths and for receiving upstream optical signals of discrete wavelengths, a remote node, coupled to the optical line terminal, a wavelength division unit settled to reflect a predetermined wavelength, and a plurality of optical network units. Each optical network unit has an optical source which is oscillated in a multi-mode and is self-injection locked by the predetermined wavelength provided thereto, thereby to generate the upstream optical signal in a single mode to be provided to the remote node.

Abstract: Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor. The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.

Abstract: Disclosed are a method and an apparatus for joint phase and frequency offset estimator for an MPSK transmission, in which the overall observation interval is divided into adjacent sub-intervals and a folded separate phase estimate is independently obtained from each of sub-intervals and is then unfolded to remove the discontinuity in computing phase estimate. The phase offset is then computed by averaging the unfolded phase estimates whereas the frequency offset is computed by averaging the differences between adjacent unfolded phase estimates.

Abstract: A radiometer imaging system includes an antenna array having a plurality of sub-arrays, each being formed of a plurality of antenna elements arranged in a sub-Y-type, a receiver array having the same number of receivers as the antenna elements, each receiver being associated with one of the antenna elements in a one-to-one correspondence to thereby define a channel to generate a first signal and a second signal from an output of each antenna element, and a correlation processor for calculating a correlation for each correlated channel pair, by using the first signal and the second signal for each antenna element, to thereby obtain an 3-D image for the object.

Abstract: Disclosed is a method of fabricating an optical fiber or an optical device doped with d metal ion and/or rare earth ion, comprising steps of: forming a partially-sintered fine re in a base material for fabricating the optical fiber or the optical device; soaking the fine re into a doping solution containing a reducing agent together with metal ion and rare on during a selected time; drying the fine structure in which the metal ion and/or rare ion soaked; and heating the fine structure such that the fine structure is sintered.

Abstract: A radiometer imaging system includes an antenna array having a plurality of sub-arrays, each being formed of a plurality of antenna elements arranged in a sub-Y-type, a receiver array having the same number of receivers as the antenna elements, each receiver being associated with one of the antenna elements in a one-to-one correspondence to thereby define a channel to generate a first signal and a second signal from an output of each antenna element, and a correlation processor for calculating a correlation for each correlated channel pair, by using the first signal and the second signal for each antenna element, to thereby obtain an 3-D image for the object.

Abstract: The present invention relates to a complex composed of cucurbituril and fullerene and a method for manufacturing the complex on a solid-phase. A complex in accordance with the present invention can be usefully used as a medicine delivery means in the field of pharmaceutics.

Abstract: Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor. The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.

Abstract: A wavelength division multiplexed-passive optical network includes an optical line terminal for generating downstream optical signals of discrete wavelengths and for receiving upstream optical signals of discrete wavelengths, a remote node, coupled to the optical line terminal, a wavelength division unit settled to reflect a predetermined wavelength, and a plurality of optical network units. Each optical network unit has an optical source which is oscillated in a multi-mode and is self-injection locked by the predetermined wavelength provided thereto, thereby to generate the upstream optical signal in a single mode to be provided to the remote node.

Abstract: A method and an apparatus for pulse-amplitude equalization of rational harmonic mode-locked optical pulses provides modulation voltages greater than a switching voltage of a dual-electorde Mach-Zehnder modulator to electrodes of the Mach-Zehnder modulator, so that rational harmonic mode-locked optical pulses experience the same transmission coefficient through the Mach-Zehnder modulator, to thereby achieve amplitude-equalized rational harmonic mode-locked optical pulse trains.

Abstract: Disclosed is a mode-filtering and mode-selecting method in a multi-mode waveguide, and a waveguide amplifier, a semiconductor laser, and a VCSEL using the method. These optical elements include a cladding region that has a periodically changed refractive-index structure, thereby obtaining a mode-filtering or mode-selecting function, which in turn allows only a single mode in the transverse direction to propagate along the waveguide. By forming the periodic index-variation structure, the EDF, the semiconductor laser, and the VCSEL achieve a single mode operation although the cross-sectional area is much larger than that of the prior art, consequently realizing a high-performance or high-power single-mode amplifier and laser.

Abstract: Disclosed is a method of manufacturing a high-k gate dielectric, characterized in that an annealing process in a forming gas atmosphere, corresponding to a final step of a manufacturing process of a semiconductor device based on MOSFET fabrication techniques, is applied for a high-k gate dielectric-containing semiconductor device, under high pressure, instead of conventional atmospheric pressure, whereby passivation effects of interface charges and fixed charges of the semiconductor device can be maximized even at relatively low temperatures.

Abstract: A method of fabricating an optical fiber preform using a modified chemical vapor deposition method and a nonlinear optical fiber fabricated using the method. The method comprises the steps of: forming a cladding layer and a core layer in a quartz glass tube; partially sintering the core layer; partially shrinking both ends of the quartz glass tube, in which the cladding layer and the core layer partially sintered are formed; and doping a sintered portion of the core layer with an impurity component, so that the optical fiber preform fabricated has a predetermined function. The nonlinear optical fiber being fabricated by a process comprising the steps of: forming the cladding layer and the core layer in a quartz glass tube; partially sintering the core layer; partially collapsing both ends of the quartz glass tube; and doping a sintered portion of the core layer with a predetermined impurity component.

Abstract: Disclosed herein is a method for manufacturing a zinc oxide semiconductor. The method comprises the steps of forming a zinc oxide thin film including a group V element as a dopant on a substrate by using a zinc oxide compound containing a group V element or an oxide thereof, charging the substrate having the zinc oxide thin film formed thereon into a chamber for thermal annealing, and thermal annealing the substrate in the chamber to activate the dopant, thereby changing the zinc oxide thin film exhibiting n-type electrical properties or insulator properties to a zinc oxide thin film exhibiting p-type electrical properties.

Abstract: A method for fabricating a counter electrode for a dye-sensitized solar cell includes co-sputtering platinum and a metal oxide as target materials to deposit nanocrystalline platinum and an amorphous metal oxide on the substrate. The counter electrode exhibits improved performances as an electro-catalyst to assist in the reduction of I3? during operation of a dye-sensitized solar cell.

Abstract: A magnetic type floor hinge installed on a door, comprising an installing bracket, a moving plate, a compressing spring, a longitudinal hole in the moving plate, a main shaft cam in contact with the longitudinal hole. The main shaft cam is rotatably connected to a hinge shaft of the door and rotates with the hinge shaft. The magnetic type floor hinge further comprises at least one roller attached to the moving plate, a disk rotatably attached to the installing bracket, a yoke attached to the installing bracket and arranged around a magnetic operating part, and a gear-box comprising a plurality of gears that are connected between a rotating shaft of the main shaft cam and a rotating shaft of the disk. During operation of this magnetic type floor hinge, the rotating movement of the door hinge is converted to a rotating movement of the disk.

Abstract: Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor.

Abstract: Disclosed is a method of fabricating gate dielectric for use in semiconductor device having a high dielectric constant comprising formation of a metal oxide or a metal silicate on a silicon substrate, nitridation to incorporate nitrogen component to said metal oxide and reoxidation of said metal oxide that contains said nitrogen component. In this invention, the nitridation can be performed via heat-treatment of the resulting product, wherein said metal oxide is formed within, in a nitrogen-containing gas atmosphere; performed by plasma treatment by exposing said metal oxide to a nitrogen-containing plasma atmosphere; or performed by ion instillation of nitrogen component to said metal oxide, thereby providing a gate dielectric for use in semiconductor device which is able to remarkably inhibit the increase in effective thickness resulted from a post heat-treatment at high temperature by forming a film of metal oxide such as ZrO2 followed by nitridation and reoxidation.