Abstract: An organic electroluminescent device having a light-emitting layer, wherein the light-emitting layer contains a host compound having a boron atom and an oxygen atom in the molecule as a first component, a thermally assisting delayed fluorescent material such that the energy difference ?EST between the excited singlet energy level and the excited triplet energy level is 0.20 eV or less as a second component, and a fluorescent material as a third component, and has a high light emission efficiency.

Abstract: An object of the present invention is to provide a novel technique for uniformizing a carrier concentration of an epitaxial layer. The present invention is a method for uniformizing the carrier concentration of an epitaxial layer, the method including a growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment on the bulk layer 10. As described above, including the growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment can suppress the variation in the carrier concentration in the epitaxial layer 20.

Abstract: An object of the present invention is to provide a novel technique for improving an activation rate of dopant of an epitaxial layer. Another object of the present invention is to provide a novel technique for suppressing variation in activation rate of dopant in the epitaxial layer. The present invention is a method for improving the activation rate of dopant of an epitaxial layer 20, including a growth step S10 of growing the epitaxial layer 20 having the dopant on a bulk layer 10 under an equilibrium vapor pressure environment.

Abstract: The present invention provides a novel polycyclic aromatic compound having a plurality of aromatic rings linked by a boron atom, a nitrogen atom, and the like, and thus increases the number of alternatives of a material for an organic electroluminescent (EL) device. Furthermore, the present invention provides an excellent organic EL device by using a novel polycyclic aromatic compound as a material for an organic EL device.

Abstract: To provide a new temperature distribution evaluation method, a temperature distribution evaluation device, and a soaking range evaluation method, as the temperature distribution evaluation method which evaluates a temperature distribution of a heating area 40A provided in a heating device 40, the present invention is a temperature distribution evaluation method which, in the heating area 40A, heats a semiconductor substrate 10 and a transmitting and receiving body 20 for transporting a raw material to and from the semiconductor substrate 10, and evaluates a temperature distribution of the heating area 40A on the basis of a substrate thickness variation amount A of the semiconductor substrate 10. Accordingly, temperature distribution evaluation can be implemented for a high temperature area at 1600-2200° C. or the like at which it is hard to evaluate the temperature distribution due to the limit of a thermocouple material.

Abstract: The present invention addresses the problem of providing a novel SiC substrate production method. The SiC substrate production method according to the present invention comprises an etching step S10 of etching a SiC base substrate 10, a crystal growth step S20 of growing a SiC substrate layer 13 on the SiC base substrate 10 to produce a SiC substrate body 20, and a peeling step S30 of peeling at least a portion of the SiC substrate body 20 to produce a SiC substrate 30, the method being characterized in that each of the etching step S10 and the crystal growth step S20 is a step of arranging the SiC base substrate 10 and a SiC material 40 so as to face each other and heating the SiC base substrate 10 and the SiC material 40 so as to form a temperature gradient between the SiC base substrate 10 and the SiC material 40.

Abstract: An apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage, includes a main container which is capable of containing an SiC base substrate, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace which contains the main container and heats the main container so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space. The main container has a growth space in which a growth layer is formed on one surface of the SiC base substrate, and an etching space in which the other surface of the SiC base substrate is etched.

Abstract: A power-generating method of generating power from a power-generating element. An electric polarization state in the power-generating element is changed by phase transition. First, an electric field is applied to the power-generating element to change a phase transition temperature of the power-generating element by an electric-field application unit for applying the electric field to the power-generating element without changing a temperature of the power-generating element. Then, the electric polarization state in the power-generating element is changed by application of the electric field and control of the application, so that the power from the power-generating element is generated.

Abstract: An object of the present invention is to provide a SiC semiconductor substrate capable of reducing a density of basal plane dislocations (BPD) in a growth layer, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a strained layer removal process S10 that removes a strained layer introduced on a surface of a SiC substrate; and an epitaxial growth process S20 that conducts growth under a condition that a terrace width W of the SiC substrate is increased. When a SiC semiconductor substrate is manufactured in such processes, the basal plane dislocations BPD in the growth layer can be reduced, and a yield of a SiC semiconductor device can be improved.

Abstract: Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor. The method for manufacturing a semiconductor substrate includes a first heating step of heating a heat treatment space which contains a semiconductor substrate and a transmission/reception body that transports atoms between the semiconductor substrate and the transmission/reception body such that a temperature gradient is formed between the semiconductor substrate and the transmission/reception body, and a second heating step of heating the same with the temperature gradient being vertically inverted.

Abstract: A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommodate a SiC substrate and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace for accommodating the main container, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container having an etching space formed by causing a portion of the main container disposed on the low-temperature side of the temperature gradient and the SiC substrate to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient.

Abstract: The present invention addresses the problem of providing a novel method for manufacturing a SiC substrate, and a manufacturing device for said method. The present invention realizes: a method for manufacturing a SiC substrate, comprising heating two mutually opposing SiC single-crystal substrates and transporting a raw material from one SiC single-crystal substrate to the other SiC single-crystal substrate; and a manufacturing device for said method. Through the present invention, each of the mutually opposing SiC single-crystal substrate surfaces can be used as a raw material for crystal growth of the other SiC single-crystal substrate surface, and it is therefore possible to realize a highly economical method for manufacturing a SiC substrate.

Abstract: Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

Abstract: An object of the present invention is to provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation. In order to solve the above problems, the present invention provides a method for producing SiC single crystals, including a stress reduction step of heating a SiC single crystal at 1800° C. or higher in an atmosphere containing Si and C elements to reduce internal stress in the SiC single crystal. With this configuration, the present invention can provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation.

Abstract: An organic light-emitting device containing both a compound represented by the following general formula (1) and a compound represented by the following general formula (2) has a high light emission efficiency. The rings a to c each are a benzene ring that can be optionally condensed, R1 and R2 each represent a substituted or unsubstituted aryl group, etc., four of R31 to R35 each are a substituted or unsubstituted carbazol-9-yl group, but all of these four are not the same, and the remaining one is a hydrogen atom, a cyano group, etc.

Abstract: Disclosed is a method for using a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment. The SiC container may be heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space. The SiC container may be heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space.

Abstract: A polycyclic aromatic compound represented by Formula (1) is provided by the invention: wherein A11 ring, A21 ring, A31 ring, B11 ring, B21 ring, C11 ring, and C31 ring are an aryl or heteroaryl ring which may be substituted, Y11, Y21, Y31 are B or the like, X11, X12, X21, X22, X31, X32 are >O or >N—R, R in the above >N—R is an and which may be substituted or the like, R in the above >N—R or the like may be bonded to A11 ring, A21 ring, A31 ring, B11 ring, B21 ring, C11 ring, and/or C31 ring by a linking group or a single bond; and at least one hydrogen in the compound represented by Formula (1) may be replaced with deuterium, cyano, or a halogen.

Abstract: The present disclosure is intended to enhance the capability for arbuscular mycorrhizal symbiosis by treating the arbuscular mycorrhizal fungi with oxidized glutathione or cystathionine.

Abstract: The objective of the invention is to provide a polycyclic aromatic compound in which solubility to a solvent, film formability, wet coatability, thermal stability, and in-plane orientation are improved. This objective is achieved by alight emission layer-forming composition comprising: as a first component, at least one type of dopant material selected from the group consisting of polycyclic aromatic compounds represented by general formula (A) and polycyclic aromatic oligomer compounds including a plurality of structures represented by general formula (A); as a second component, a specific low-molecular-weight host material; and, as a third component, at least one type of organic solvent. In formula (A), ring A, ring B, and ring C each independently represent an aryl ring or a hetero aryl ring, Y1 is B, and X1 and X2 each independently represent O or N—R wherein at least one of X1 and X2 is N—R.

Abstract: A polycyclic aromatic compound represented by general formula (1) described below and having a bulky substituent in a molecule is used as a material for an organic device, whereby, for example, an organic EL device excellent in quantum efficiency can be provided. In particular, concentration quenching can be suppressed even if a use concentration is comparatively high, and therefore the present art is advantageous in a device production process. In formula (1) described above, R1, R3, R4 to R7, R8 to R11 and R12 to R15 are independently hydrogen, aryl or the like, X1 is —O— or >N—R (R is aryl or the like), Z1 and Z2 are a bulky substituent such as aryl, and at least one hydrogen in the compound represented by formula (1) may be replaced by halogen or deuterium.