Patents Assigned to Kyma Technologies, Inc.
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Patent number: 9263266Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: June 15, 2015Date of Patent: February 16, 2016Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
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Publication number: 20150200256Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: ApplicationFiled: April 4, 2013Publication date: July 16, 2015Applicant: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
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Patent number: 9082890Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: April 4, 2013Date of Patent: July 14, 2015Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
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Patent number: 8871556Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: December 17, 2013Date of Patent: October 28, 2014Assignee: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Publication number: 20140162441Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: December 17, 2013Publication date: June 12, 2014Applicant: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 8637848Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: December 6, 2012Date of Patent: January 28, 2014Assignee: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Publication number: 20130264569Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: December 6, 2012Publication date: October 10, 2013Applicant: KYMA TECHNOLOGIES, INC.Inventor: Kyma Technologies, Inc.
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Patent number: 8435879Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: November 30, 2006Date of Patent: May 7, 2013Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, Nathaniel Mark Williams, Xueping Xu
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Patent number: 8349711Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: January 27, 2011Date of Patent: January 8, 2013Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 8202793Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.Type: GrantFiled: August 12, 2010Date of Patent: June 19, 2012Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Denis Tsvetkov, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 7897490Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: November 30, 2006Date of Patent: March 1, 2011Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Publication number: 20100327291Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: November 30, 2006Publication date: December 30, 2010Applicant: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 7777217Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.Type: GrantFiled: November 30, 2006Date of Patent: August 17, 2010Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Denis Tsvetkov, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 7727874Abstract: Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation.Type: GrantFiled: September 12, 2008Date of Patent: June 1, 2010Assignee: Kyma Technologies, Inc.Inventors: Andrew David Hanser, Edward Alfred Preble, Lianghong Liu, Terry Lee Clites, Keith Richard Evans
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Publication number: 20090081857Abstract: Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal.Type: ApplicationFiled: September 12, 2008Publication date: March 26, 2009Applicant: Kyma Technologies, Inc.Inventors: Andrew David Hanser, Edward Alfred Preble, Lianghong Liu, Terry Lee Clites, Keith Richard Evans
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Publication number: 20070138505Abstract: In a method for making a low-defect single-crystal GaN film, an epitaxial nitride layer is deposited on a substrate. A first GaN layer is grown on the epitaxial nitride layer by HVPE under a growth condition that promotes the formation of pits, wherein after growing the first GaN layer the GaN film surface morphology is rough and pitted. A second GaN layer is grown on the first GaN layer to form a GaN film on the substrate. The second GaN layer is grown by HVPE under a growth condition that promotes filling of the pits, and after growing the second GaN layer the GaN film surface morphology is essentially pit-free. A GaN film having a characteristic dimension of about 2 inches or greater, and a thickness normal ranging from approximately 10 to approximately 250 microns, includes a pit-free surface, the threading dislocation density being less than 1×108 cm?2.Type: ApplicationFiled: November 30, 2006Publication date: June 21, 2007Applicant: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew Hanser, N. Williams, Xueping Xu
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Publication number: 20070141823Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.Type: ApplicationFiled: November 30, 2006Publication date: June 21, 2007Applicant: Kyma Technologies, Inc.Inventors: Edward Preble, Denis Tsvetkov, Andrew Hanser, N. Williams, Xueping Xu
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Patent number: 6692568Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.Type: GrantFiled: November 30, 2001Date of Patent: February 17, 2004Assignee: Kyma Technologies, Inc.Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas