Abstract: The present invention relates to a method of producing polyvinyl alcohol hydrogel characterized by the following features: the production process consists of a low-temperature processing stage in which the solution of polyvinyl alcohol with a polymerization degree over 1200 is processed at a low temperature so that polyvinyl alcohol is gelated, and a high-temperature processing stage in which the polyvinyl alcohol gelated int he low-temperature processing stage is dried, then processed at higher than 100.degree. C.; in this way, polyvinyl alcohol hydrogel with a saturated water content lower than 40 wt % is obtained. The hydrogels of this invention are useful for providing improved artificial articular cartilage for replacement of cartilage in the human body.

Abstract: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.

Abstract: A recording medium suitable for use in a photo-thermo-magnetic memory of high density recording, including a substrate; a first magnetic layer, such as an amorphous TbFe film, which has a large coercive force and whose axis of easy magnetization is oriented in the direction perpendicular to the surface of the first layer; and a second magnetic layer, such as an amorphous GdTbCoFe film, having (i) a larger polar Kerr rotation or reflection than that of the first layer, (ii) the same polarity of polar Kerr rotation as that of the first layer, (iii) a direction of its magnetic moment aligned in parallel with that of the first layer and (iv) a thickness permitting the transmittance of a light, such as laser beam, therethrough and being magnetically coupled with the first layer by an exchange interaction therebetween; the first and second magnetic layers being superimposed on the substrate in that order or in the inverse order.

Abstract: An intake burner is disclosed for use in an internal combustion engine having an air intake system including an air intake tube, comprising an outer tube adapted to be attached to the air intake tube, a heater mounted in the outer tube and made of a ceramic material with a heating resistor embedded therein. A holder surrounds the heater in spaced relation thereto and together with the heater defines a vaporizing and a combustion region around the heater for vaporizing supplied fuel along a surface of the heater and for burning vaporized fuel supplied from the vaporizing region. Fuel feed means directs fuel into the vaporizing region around the heater, and a support member attaches the heater to the outer tube.

Abstract: The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. According to first embodiment of the invention, the photosensitive member comprises an electrically conductive substrate, an amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns, and an amorphous silicon photoconductive layer of 5 to 30 micron thick formed on the amorphous silicon-germanium photoconductive layer. Second embodiment of the photosensitive member comprises a substrate, an amorphous silicon semiconductor layer of 5 to 100 micron thick and an amorphous silicon-germanium photoconductive layer formed on the amorphous silicon semiconductor layer.