Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
Type:
Grant
Filed:
February 14, 2020
Date of Patent:
May 18, 2021
Assignee:
KYOCERA SLD Laser, Inc.
Inventors:
Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.
Type:
Grant
Filed:
March 6, 2020
Date of Patent:
May 11, 2021
Assignee:
KYOCERA SLD Laser, Inc.
Inventors:
James W. Raring, Paul Rudy, Chendong Bai