Abstract: A method for fabricating an 8-beam bridge-type silicon acceleration sensor omprises the steps of: growing a silicon oxide layer on the top surface of the silicon substrate; forming an n.sup.+ diffusion region in the substrate by successively performing the process of opening a diffusion window in the silicon oxide layer, implanting n.sup.+ impurities in the silicon substrate through the diffusion window, and evenly diffusing the n.sup.+ impurities into the substrate; removing the silicon oxide layer, and then growing an epitaxial layer thereon; forming a plurality of piezo-resistors in the epitaxial layer by successively performing the process of growing an oxide layer on the epitaxial layer, implanting impurities, and then evenly diffusing the impurities; removing the silicon oxide layer; forming a porous silicon layer from the n.sup.