Abstract: Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.
Type:
Grant
Filed:
November 8, 2006
Date of Patent:
November 8, 2011
Assignee:
Kyunghee University Industrial & Academic Collaboration Foundation
Inventors:
Jin Jang, Jae-Hwan Oh, Eun-Hyun Kim, Ki-Hyoung Kim
Abstract: Disclosed herein is a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor, and more specifically a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor wherein a phosphosilicate-spin-on-glass (P-SOG) is used for a gate insulating film. The method comprises the steps of: forming a buffer layer on an insulating substrate; forming a gate metal pattern on the buffer layer; forming a planarized gate insulating film on the gate metal pattern; depositing an amorphous silicon layer on the gate insulating film; crystallizing the amorphous silicon layer into a polycrystalline silicon layer; forming a n+ or p+ layer on the polycrystalline silicon layer; forming a source/drain metal layer on the n+ or p+ layer; and forming a passivation layer on the source/drain metal layer.
Type:
Grant
Filed:
December 12, 2006
Date of Patent:
February 16, 2010
Assignee:
Kyunghee University Industrial & Academic Collaboration Foundation
Abstract: Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
Type:
Grant
Filed:
September 2, 2004
Date of Patent:
February 9, 2010
Assignee:
Kyunghee University Industrial & Academic Collaboration Foundation
Inventors:
Jin Jang, Jong-Hyun Choi, Seung-Soo Kim, Jae-Hwan Oh, Jun-Hyuk Chon