Abstract: A semiconductor device includes a semiconductor element, a holding substrate holding the semiconductor element, a frame body provided on the holding substrate so as to surround the semiconductor element and having a hole which communicates to a space formed between the holding substrate and the frame body and the frame body and the holding substrate form a housing, a plurality of leads having inner lead portions connected to the semiconductor element and outer lead portions extending outside the frame body, and a resin filling the space and encapsulating the semiconductor element and the inner lead portions. All of the outer lead portions extend outside the housing from one side of the housing.

Abstract: A semiconductor device includes a semiconductor element, a holding substrate holding the semiconductor element, a frame body provided on the holding substrate so as to surround the semiconductor element and having a hole which communicates to a space formed between the holding substrate and the frame body and the frame body and the holding substrate form a housing, a plurality of leads having inner lead portions connected to the semiconductor element and outer lead portions extending outside the frame body, and a resin filling the space and encapsulating the semiconductor element and the inner lead portions. All of the outer lead portions extend outside the housing from one side of the housing.

Abstract: A semiconductor device includes a semiconductor chip, and a multi-layered member connected to the semiconductor chip. The multi-layered member includes one or a plurality of wiring layers and one or a plurality of insulating layers alternately stacked. The one or the plurality of insulating layers have holes. The multi-layered member has electrode parts which include deformed portions of the above one or the plurality of wiring layers obtained by deforming the above one or the plurality of wiring layers via said holes.

Abstract: A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.

Abstract: A method of manufacturing a semiconductor device which includes a semiconductor chip and a plastic package of a thermosetting polymer encapsulating the semiconductor chip through a molding process. The thermosetting polymer of the plastic package fully or partially covers a bottom surface of the semiconductor chip. An ultraviolet cleaning process is performed for cleaning the bottom surface of the semiconductor chip prior to the molding process.

Abstract: A semiconductor device includes a substrate having top and bottom surfaces, a semiconductor element mounted on the top surface of the substrate, and a resin package made of a resin and encapsulating the semiconductor element. The substrate includes at least one resin gate hole enabling the resin to be introduced from the bottom surface of the substrate via the resin gate hole when encapsulating the semiconductor element by the resin.

Abstract: A process for manufacturing semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Abstract: A metal wiring is fabricated for a semiconductor device by fabricating an metal layer made of, a aluminum alloy on a semiconductor substrate through an insulation layer and an undercoating layer for the metal layer, optically patterning a resist layer for producing a resist pattern, radiating ultraviolet rays onto the resist pattern for curing the resist pattern so that the resist pattern becomes a cured resist pattern, etching the metal layer with reactive gas including chlorine by using the cured resist pattern as a mask so as to produce a metal wiring under the cured resist pattern and ashing the cured resist pattern by down flow ashing of oxygen gas including hydrogen and/or hydrogen monoxide, producing the metal wiring to the semiconductor device, wherein the curing by radiation with ultraviolet rays reduces the amount of decomposed polymer on the pattern resist, and therefore on the metal wiring, which would otherwise have formed as a result of this down flow ashing with oxygen.

Abstract: A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.

Abstract: A semiconductor device including a plurality of leads respectively made up of an inner lead and an outer lead, a semiconductor chip electrically connected to the inner leads, and a package encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package. The package has an upper part and a lower part which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and each of the outer leads have a wide part which is wider than other parts of the outer lead extending outwardly of the package only within the stepped part of the package.

Abstract: A process for manufacturing semiconductor device including a plurality of leads respectively made up of an inner lead and an outer lead, a semiconductor chip electrically connected to the inner leads, and a package encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package. The package has an upper part and a lower part which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and each of the outer leads have a wide part which is wider than other parts of the outer lead extending outwardly of the package only within the stepped part of the package.

Abstract: A semiconductor integrated circuit device is intended to prevent generation of an unnecessary leak current and hence to reduce power consumption.

Abstract: A chip-on chip type semiconductor device is provided in which semiconductor chips provided in a package cannot be displaced during a transfer molding process so as to eliminate a short circuit. At least two lead frames are provided in and extend from the package so that the first semiconductor chip and the second semiconductor chip can be electrically connected to external devices. A die stage is provided between the first semiconductor chip and the second semiconductor chip. A bonding wire is provided for wiring between the first semiconductor chip and the lead frames, and TAB leads connect the second semiconductor chip to the lead frames. The lead frames may extend between the first and second semiconductor devices instead of the die stage. The lead frames may include one having a portion extending in a direction perpendicular to the longitudinal direction of the lead frames between the first and second semiconductor chips.

Abstract: A first level converter is provided with an input transistor circuit and an output transistor circuit. The input transistor circuit is supplied with power from a first power source and outputs a complementary signal on the basis of an input signal. The output transistor circuit is supplied with power from a second power source, and amplifies and outputs the complementary signal. A second level converter is provided with a pulse generating circuit and a signal output circuit. The pulse generating circuit is supplied with power from the first driving power source, and generates a one-shot pulse signal. The signal output circuit is supplied with power from the second driving power source, latches the one-shot pulse signal and outputs the signal. The semiconductor integrated circuit is provided with a first circuit system, a level conversion circuit and a second circuit system. The first circuit system is driven by being supplied with power from the first driving power source.

Abstract: A semiconductor device includes a substrate having top and bottom surfaces, a semiconductor element mounted on the top surface of the substrate, and a resin package made of a resin and encapsulating the semiconductor element. The substrate includes at least one resin gate hole enabling the resin to be introduced from the bottom surface of the substrate via the resin gate hole when encapsulating the semiconductor element by the resin.

Abstract: A semiconductor device including a plurality of leads respectively made up of an inner lead and an outer lead, a semiconductor chip electrically connected to the inner leads, and a package encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package. The package has an upper part and a lower part which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and each of the outer leads have a wide part which is wider than other parts of the outer lead extending outwardly of the package only within the stepped part of the package.

Abstract: A chip-on chip type semiconductor device is provided in which semiconductor chips provided in a package cannot be displaced during a transfer molding process so as to eliminate a short circuit. At least two lead frames are provided in and extend from the package so that the first semiconductor chip and the second semiconductor chip can be electrically connected to external devices. A die stage is provided between the first semiconductor chip and the second semiconductor chip. A bonding wire is provided for wiring between the first semiconductor chip and the lead frames, and TAB leads connect the second semiconductor chip to the lead frames. The lead frames may extend between the first and second semiconductor devices instead of the die stage. The lead frames may include one having a portion extending in a direction perpendicular to the longitudinal direction of the lead frames between the first and second semiconductor chips.

Abstract: A flip-flop circuit includes a first switch for controlling passing of input data in response to a single clock signal, a first inverter for inverting the data passed through the first switch, a second inverter for inverting the data output from the first inverter into inverted data and for inputting the inverted data to the first inverter, a second switch for controlling passing of the data output from the first inverter in response to the single clock signal, a third inverter for inverting the data passed through the second switch, and a fourth inverter for inverting the data output from the third inverter into inverted data and for inputting the inverted data to the third inverter, where the first inverter has a driving capability larger than that of the second inverter, and the third inverter has a driving capability larger than that of the fourth inverter.

Abstract: A semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Abstract: A semiconductor device includes at least a first semiconductor chip and a second semiconductor chip each having a first surface and a second surface. The second surface of the first semiconductor chip confronts the first surface of the second semiconductor chip. Additionally, the semiconductor device includes a plurality of leads having inner portions and outer portions, where the inner portions of the leads are electrically coupled to selected portions on one of the first and second surfaces of each of the first and second semiconductor chips. An insulator is interposed between the second surface of the first semiconductor chip and the first surface of the second semiconductor chip at portions other than the selected portions. Further, a resin package encapsulates the first and second semiconductor chips so that the outer portions of the leads project outside the resin package.