Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2??Formula I, M(=O)(NR2)4??Formula II, M(=O)2(NR2)2??Formula III, M(=NR)2(OR)2??Formula IV, and M(=O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
Type:
Grant
Filed:
March 4, 2020
Date of Patent:
November 2, 2021
Assignee:
L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude
Inventors:
Clément Lansalot-Matras, Julien Lieffrig, Christian Dussarrat, Antoine Colas, Jong Min Kim
Abstract: Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.
Type:
Grant
Filed:
May 29, 2009
Date of Patent:
January 24, 2012
Assignee:
L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude