Abstract: A process for producing synthesis gas by gasifying a carbon carrier in a slurry having a significant content of phosphorus. According to the invention, the phosphorus compounds dissolved in the liquid phase of the suspension are at least partly precipitated by treating the suspension by increasing the pH of the suspension and/or increasing the concentration of metal cations in the suspension, before the suspension is heated further and subsequently applied to the gasification reactor.

Abstract: The invention relates to an apparatus for cryogenic separation of a mixture of carbon monoxide, hydrogen and nitrogen, including a stripping column and a denitrogenation column, a pipe for sending the mixture in liquid form to the head of the stripping column, a pipe for removing a liquid depleted of hydrogen connected to the stripping column, a pipe for removing a gas enriched with hydrogen from the stripping column, means for sending the liquid depleted of hydrogen or a fluid derived from said liquid to the denitrogenation column, a pipe for drawing a liquid enriched with carbon monoxide from the denitrogenation column, a pipe for drawing a gas enriched with nitrogen from the head of the denitrogenation column and means for sending at least one portion of the gas enriched with hydrogen to the denitrogenation column.

Abstract: A process for separating monosilane from a mixture comprising monosilane and chlorosilanes comprising: a) Introducing mixture to a condenser (3) for separating lower-boiling chlorosilanes—containing monosilane from higher-boiling chlorosilanes enriched condensates; b) Collecting said higher-boiling condensates, in a condensate buffer (19) connected to the aforesaid condenser (3) by a condensate feed pipe (8); c) Sending higher-boiling chlorosilanes enriched condensates from the aforesaid condensate buffer (19) into a subcooler (21) which is installed on a reflux feed line (7) connected to the upper portion of a chlorosilane absorber (20); d) Feeding lower-boiling chlorosilanes—containing monosilane to the aforesaid chlorosilane absorber (20) for separating monosilane; e) Extracting monosilane—rich gas from the upper portion of the aforesaid chlorosilane absorber (20).

Abstract: Disclosed are methods to remove residual fluorine left in a chamber surface without the use of a plasma device or temperature elevation. The disclosed methods may permit the next step in the deposition process to occur more quickly.