Abstract: The invention relates to a device for storing articles in a controlled atmosphere, comprising: at least one storage module capable of receiving the articles to be stored; a storage module provided with at least one shelf for positioning the articles, the storage module having a substantially parallelepiped shape, and having two substantially vertical and opposite walls between which the shelves extend, wherein the device is characterized in that shutters are provided, each shutter being positioned opposite one of the shelves, and between one of the two walls and the shelf in question, so as to prevent the gas from flowing vertically at the location of a shutter, and to allow the gas to flow only transversely along the shelf associated with the shutter in question.

Abstract: Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on one or more substrates via vapor deposition processes using the Tantalum-containing film forming composition.

Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis process that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This process facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.

Abstract: The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.