Abstract: Disclosed are effective and simple adsorbents and methods of using the adsorbents for removing metal impurities generated during storage, transportation and supply of organometallic compounds. The disclosed adsorbents and methods provide for the easy and effective removal of the metallic impurities or compounds generated from decomposition of the organometallic compound during its transportation, storage, and supply. Namely, the disclosed adsorbents and methods permit the stable supply of a high purity organometallic compound desired in the semiconductor and photovoltaic cell.

Abstract: Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.

Abstract: Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: The invention relates to a container for packaging NO/N2 mixtures, such as a gas cylinder, comprising a main body (1) comprising an internal volume (7) having a capacity between 2 and 30 liters and containing an NO/N2 mixture at a pressure above atmospheric pressure, the main body (1) being formed from an aluminum alloy, characterized in that the main body (1) is formed from an aluminum alloy comprising aluminum and a proportion by weight of Cr of between 0.05 and 0.80%, of Cu of between 1 and 3%, of Pb of at most 100 ppm, of Zn of between 5 and 8%, and of Mg of between 1 and 3%.

Abstract: The method for packaging a gaseous NO/N2 mixture into at least one container, characterized in that, prior to admitting the said NO/N2 mixture, said at least one container is subjected to at least a purging step during which the internal volume of the container is placed in fluidic communication with the ambient atmosphere, an evacuating step during which the internal volume of the container is placed under depression, and a gas rinsing step during which an inert gas is admitted to said at least one container. For preference, the final gaseous NO/N2 mixture contains an NO content less than or equal to 1200 ppm by volume for a pressure of between P1 and 800 bar.

Abstract: The invention relates to an installation for packaging a gaseous NO/N2 mixture into at least one container comprising a source (1) of gaseous NO, a source (2) of gaseous nitrogen, at least one filling system (3) comprising one or more filling stations (24) for gas containers (25), a first gas line (11) fluidically connecting the source (1) of gaseous NO to the filling system (3), and a second gas line (12) fluidically connecting the source (2) of gaseous nitrogen to the filling system (3). The first gas line (11) and the second gas line (12) each comprise a mass flow meter (4, 5), each mass flow meter (4, 5) being connected (14, 15) to a control device (6) collaborating with each mass flow meter (4, 5).

Abstract: Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF2, at temperatures ranging from about 25° C. to about 300° C., preferably from about 50° C. to about 250° C., and more preferably from about 100° C. to about 200° C.

Abstract: The invention relates to a liquid formulation including a liquid solution and at least one gas selected from xenon, argon, hydrogen, H2S, helium, krypton, neon, radon or CO, said gas being dissolved in said liquid solution, for the use thereof as a preservative solution for preserving biological material, in particular cells, tissue and biological organs, in particular an organ selected from the heart, the kidney, the liver, the pancreas and the intestines. The gas is preferably argon.

Abstract: A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.

Abstract: This application discloses silicon solar cells manifesting enhanced light induced degradation characteristics. The application also discloses silicon solar cells with a silicon-based substrate comprising boron, oxygen and carbon, and an antireflective coating (ARC) containing at least one carbon-containing layer adjacent to the substrate. Also disclosed are methods for preparing solar cells.

Abstract: Disclosed are stabilized bicyclo[2.2.1]hepta-2,5-diene compositions and methods of making and using the same.

Abstract: A valve for pressurized fluid comprising a body (1) accommodating a fluid circuit (2) having an upstream end (3) designed to be placed in communication with a reserve of pressurized fluid and a downstream end (4) designed to be placed in communication with a using device, the circuit (2) comprising an isolation valve element (5) in order to selectively close off the circuit (2), the valve element (5) being controlled by a lever (8) mounted so as to pivot on the body (1) between a rest position in which the isolation valve element (5) is held in a position of closing the circuit (2) and an active position in which the lever (8) moves the isolation valve element (5) into a position of opening the circuit (2).

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract: A process for efficiently removing carbon dioxide from a hydrocarbon containing feed stream utilizing a membrane separation unit in conjunction with a heat exchanger and a carbon dioxide separation unit wherein the streams obtained in the carbon dioxide separation unit are utilized to provide the cooling effect in the heat exchanger.

Abstract: Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films, The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.

Abstract: The invention relates to a laser cutting method for cutting a stainless steel workpiece using laser beam generation means comprising a silica fibre with an ytterbium-doped core to generate the laser beam. Preferably, the laser beam generated by the ytterbium-based fibre has a wavelength between 1.07 and 1.09 ?m, a quality factor of the laser beam is between 0.33 and 8 mm.mrad, and the laser beam has a power of between 0.1 and 25 kW. The assistance gas for the laser beam is chosen from nitrogen, helium, argon and mixtures thereof, and, optionally, it further contains one or more additional compounds chosen from O2, CO2, H2 and CH4.

Abstract: Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20° C. to approximately 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: The invention relates to a laser cutting method for cutting a C—Mn steel workpiece, characterized in that laser beam generation means comprising at least one silica fiber with an ytterbium-doped core is used to generate the laser beam. Preferably, the ytterbium-based fiber has a wavelength between 1.07 and 1.1 ?m, preferably 1.07 ?m, the quality factor of the laser beam is between 0.33 and 8 mm.mrad, and the laser beam has a power of between 0.1 and 25 kW. The assistance gas for the laser beam is chosen from nitrogen, helium, argon, oxygen, CO2 and mixtures thereof, and, optionally, it further contains one or more additional compounds chosen from H2 and CH4.

Abstract: A method of operating a mixed ionic-electronic conducting ceramic membrane having an oxidizing side and a reducing side, said method comprising a start-up phase and a production phase, for producing a gas stream, characterized in that the start-up phase comprises a step of introducing, on the oxidizing side and the reducing side of the membrane respectively, first and second gas mixtures not capable of chemically degrading the membrane; and a step of establishing a stream of oxygen through the membrane.