Abstract: An anhydrous composition for caring for and/or making up keratin materials may include: (a) 10 to 40 wt. % of at least one non-volatile non-phenyl silicone oil, relative to the total weight of the composition; (b) at least one non-volatile hydrocarbon-based oil and/or phenyl silicone oil; (c) at least one high viscosity ester; and (d) reaction product of an unsaturated-functional silicone resin, an Si—H functional organopolysiloxane crosslinker bearing pendant hydrido functionality and optionally, an unsaturated hydrocarbon having four or more carbon atoms, in a low viscosity organopolysiloxane. A process for caring for and/or making up keratin materials, such as the skin and the lips, preferably the lips, make include applying such and anhydrous composition to the keratin materials.

Abstract: A process for preparing a solid electrolyte or a composite electrode incorporating a solid electrolyte, configured for an electrochemical system, may involve: (i) synthesizing, in a solvent medium, at least one (co)polymer by ring-opening (co)polymerization (ROP) of at least one 5-8-membered cyclic carbonate and, optionally, of at least one 5-8-membered lactone, catalyzed by Brønsted superacid(s) and initiated by compound(s) comprising hydroxide group(s); (ii) adding to the reaction medium a sufficient amount of an alkali metal or alkaline earth metal hydride, e.g., LiH, to neutralize all the catalyst and obtain an alkali metal or alkaline earth metal salt and to protect the terminal hydroxyl group(s) of the (co)polymer(s); (iii) optionally adding to the mixture from (ii) salt(s) of the alkali metal or alkaline earth metal, e.g., a lithium salt; and (iv) forming a solid electrolyte by evaporation of the solvent medium or a composite electrode incorporating the solid electrolyte.

Abstract: A pocketed spring assembly comprises a plurality of parallel strings of individually pocketed springs. A dimensionally stabilizing substrate is secured to at least some of the strings on one of the top and bottom surfaces of the strings. A scrim sheet is secured to at least some of the strings on an opposed surface of the strings to maintain the positions of the strings. The dimensionally stabilizing substrate is laterally rigid enough to maintain length and width dimensions of the coil spring assembly. However, the dimensionally stabilizing substrate is flexible enough to allow the pocketed spring assembly to be roll packed for shipping.

Abstract: The invention relates to a process for fabricating a semiconductor diode (1) via transfer of a semiconductor stack (20) then local etching to form a semiconductor pad (30), the production of the semiconductor pad (30) comprising a plurality of sequences comprising a dry etch that leaves a residual segment (23.1; 22.1), formation of a hard-mask spacer (42.1; 43.1), then a wet etch of the residual segment (23.1; 22.1).

Abstract: A method for manufacturing a quantum electronic circuit includes etching a semiconducting layer so as to obtain: a plurality of pillars; and a qubit layer; oxidising the flank of each pillar; forming coupling rows and coupling columns; and depositing separation layers leaving a contact surface protrude from each pillar.

Abstract: Described herein are systems and methods for liquid phase separation for fuel tanks and other vessels. Particularly, aspects of the present disclosure are directed to a backpressure regulator configured to open when pressure of a mixture upstream of the backpressure regulator exceeds a predetermined setpoint and a hydrophobic membrane upstream of the backpressure regulator and downstream of a first conduit. The predetermined setpoint may be determined by at least a bubble point pressure of the hydrophobic membrane. Additionally, the backpressure regulator may be fluidically connected to and downstream of the first conduit, and to at least one pump operably connected to and upstream of the first conduit and the hydrophobic membrane may be fluidically connected to and upstream of a second conduit. The backpressure regulator may be fluidically connected to and upstream of a third conduit and the third conduit may be downstream the first conduit.

Abstract: A memory cell, includes first and second main terminals, an auxiliary terminal; M memristor(s) between the main terminals, M?1; M primary switch(es), each in parallel with a memristor; and a secondary switch between the second main terminal and the auxiliary terminal. It is configured for writing to at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other primary switch, closing the secondary switch and applying a corresponding programming voltage between the first main terminal and the auxiliary terminal; and for reading at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other possible primary switch, opening the secondary switch and measuring a corresponding electrical quantity between the main terminals.

Abstract: A Metal-containing film forming composition comprising a precursor having the formula: M(=NR1)(OR2)(OR3)mL. Wherein, M=V or Nb or Ta; R1-R3=independently H or C1-C10 alkyl group; L=Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propene, butadiene, pentadienes, hexadienes, heptadienes: m=0 or 1.

Abstract: The methods, systems, devices and techniques in accordance with embodiments herein aim to bring a novel approach to Hair Virtual Try-on by replacing the natural hair of the user with a 3D representation (e.g. mesh, point cloud, implicit function, etc.) that mimics how real hair behaves. In an embodiment a physics simulation of at least one force deforms the 3D hairstyle. In an embodiment, the 3D representation includes the details and texture information independently of the color to allow accurately calculation of the resulting color. In an embodiment, the hair color is applied in response to ambient light conditions as estimated. The 3D representation can be segmented by groups of hair strands (aka “mèches” of hair) which helps with achieving vertical recoloring such as highlights, contouring or balayage (a highlighting technique applied to real hair through painting hair color to create a graduated, more natural looking effect).

Abstract: An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2: (R1)C?N ??[Formula 1] wherein in Formula 1, R1 is a C2 to C3 linear or branched perfluoroalkyl group, (R2)(R3)C?NH tm [Formula 2] wherein in Formula 2, each of R2 and R3 is independently a C1 to C2 linear perfluoroalkyl group.

Abstract: Exemplary embodiments comprise AV fistulas and other anastomotic devices for creating new or reinforcing existing side-branch vessels, and/or bridging neighboring vessels together. An exemplary embodiment may comprise a sidewall port, such as a flanged sidewall port, and/or flow frame design, such as a partially bare, flexible stent or a whisk, for purposes of creating a transmural flow. Another exemplary embodiment may comprise a compliant vessel support to aid in the transition from device to vessel and/or vessel to device, and to promote vessel dilation.

Abstract: A heat exchanger including a shell extending in a longitudinal direction D from a first end to a second end and including a mantle extending from the first end to the second end, and a solid inner core made of a core material and located inside the shell, the core extending in direction D from a first extremity towards the first end to a second extremity towards the second end. Whereby, at least one first flow path is provided inside the core, each first flow path extending from the first extremity to the second extremity of the core, n circuitous second flow paths extend through the core and/or between the core and the mantle, so that the at least one first flow path is surrounded by the n second flow paths over a non-zero rectilinear distance ?L in direction D, n being an integer greater than 1.

Abstract: Implantable devices may include a single, first component or a plurality of components such as first and second components, the second component being flexibly coupled to the first component. A socket extends over one or more of the component(s), the socket being configured to enhance the inter-component interaction and/or including one or more exposed surface(s) configured to exhibit one or more tiers of foreign body responses within a range of possible foreign body responses.

Abstract: A medical device deployment apparatus that employs a first actuation line and a second actuation line, whereby a delay is sought between initiation of the actuation of the first actuation line and actuation of the second actuation line. Prior to actuation, the first actuation line includes sequentially aligned multiple loops, wherein the multiple loops provide predefined slack to delay linear actuation of the first actuation line when tension is applied to both the first and second actuation lines.

Abstract: Methods for forming a Si-containing film on a substrate comprise heating the substrate to a temperature higher than S50° C., exposing the substrate to a vapor including a Si-containing film forming composition containing a Si-containing precursor having the formula: SiR1yR24-x-y(NH—SiR?3)x, wherein x=2, 3, 4; y=0, 1, 2, R1 and R2 each are independently selected from H, a halogen (Cl, Br, I), an C1-C4 alkyl, an isocyanate, a C1-C4 alkoxide, or an —NR3R4 group in which R3 and R4 each are independently selected from H, a C1-C4 alkyl, provided that if R3?H, R4>C1; each R? is independently selected from H, a halogen (Cl, Br, I), or a C1-C4 alkyl, and depositing the Si-containing precursor onto the substrate to form the Si-containing film on the substrate through an ALD process. The Si-containing precursor may be selected from SiH2(NH—Si(CH3)3)2, SiHCl(NH—Si(CH3)3)2, SiCl2(NH—Si(CH3)3)2, SiH(NH—Si(CH3)3)3, SiCl(NH—Si(CH3)3)3, or Si(NH—Si(CH3)3)4.

Abstract: A cryogen storage vessel at an installation is filled with liquid cryogen from a liquid cryogen storage tank that has a pressure lower than that of the vessel. After headspaces of the vessel and tank are placed in fluid communication with another via a gas transfer vessel and are pressure-balanced, a pump in a liquid transfer line connected between the tank and the vessel is operated to transfer amounts of liquid cryogen from the tank to the vessel via the liquid transfer line and pump as amounts of gaseous cryogen are transferred, through displacement by the pumped cryogenic liquid, from the vessel to the tank.

Abstract: Apparatus for separation of a gaseous mixture containing CO2, hydrogen and water includes a compressor for compressing the gaseous mixture to a first pressure between 20 to 60 bara, a temperature swing adsorption unit for drying the compressed gas mixture comprising at least two adsorbent beds, a separation unit for separation of the dry and compressed gaseous mixture in by at least one of the following techniques: partial condensation, distillation, washing and solidification to produce at least two streams, being a rich CO2 liquid enriched in CO2 and depleted in at least one of methane and hydrogen and carbon monoxide as compared with the gaseous mixture and a first residual gas depleted in CO2 and enriched in at least one of methane and hydrogen and carbon monoxide as compared with the gaseous mixture, a pressure swing adsorption unit for separation of the first residual gas depleted in CO2 by at least one pressure swing adsorption unit in order to produce at least one gas richer in CO2 than the first resi

Abstract: A method for fabricating a microelectronic device includes: producing a structure with a support provided with a semiconductor layer of a first level of components and another semiconductor layer of a second level, the other semiconductor layer including a lower sublayer contacting the insulating layer and an upper sublayer disposed on the lower sublayer, one of the lower and upper sublayers made from crystalline material while another of the lower and upper sublayers made from amorphous material; forming a transistor gate block on the semiconductor layer; forming, on either side of the gate block, by implanting dopants in the semiconductor layer, doped regions on either side of a semiconductor region facing the gate block for accommodating a channel of the transistor; and implementing heat treatment to recrystallize the second semiconductor sublayer while using the first semiconductor sublayer as a start region of a crystalline front while activating the dopants.