Abstract: A bellows including a cylindrical and corrugated side wall, extending about a longitudinal axis, the side wall including: an alternation of crests and of troughs, forming corrugations; flanks, each flank extending between a crest and a trough, each corrugation having a first flank and a second flank that are opposite, separated by a same trough; the bellows includes at least one elementary electrical circuit associated with a corrugation, the elementary electrical circuit includes a first conductive element and a second conductive element, extending along the first flank and/or the second flank, the first conductive element being separated from the second conductive element; a first conductive track and a second conductive track, linked respectively to the first conductive element and to the second conductive element, and the first conductive track and the second conductive track are configured to be connected, to a detector of closure of the elementary electrical circuit.

Abstract: An electronic authentication system includes a computer, a memory device connected to the computer, and a set of electronic components. The computer and electronic components are connected together by direct or indirect links according to a predetermined configuration, each of the electronic components being provided with a PUF intended to apply a challenge-response type authentication protocol. The electronic system is configured to broadcast a unique challenge to the set of electronic components, and the computer is configured to receive back from the set of electronic components at least one response enabling it to verify the integrity of this set of electronic components by comparing said at least one response with at least one expected response recorded beforehand in the memory device. The integrity of the set of electronic components is authenticated as being valid if the at least one response and the at least one expected response coincide.

Abstract: The present invention relates to a process for preparing perfume concrete and/or absolute which employs bringing particular, fresh, withered or dry, solid natural material(s) into contact with a first system of solvents comprising at least one “green” ketone or dioxolane-type solvent. Another subject of the invention is the perfume concrete and the perfume absolute obtained by the preparation process, a composition comprising the concrete and/or the absolute, and the use of the “green” ketone or dioxolane-type solvent to extract the concrete and/or the absolute with no chemical odour of solvent odour type.

Abstract: Aspects of hair simulation, and networks therefor are provided including aspects to train such networks. There is provided a generative model for hair simulation that is guided during training by a hair classifier model. The generative model in an embodiment is provided for use in a virtual try-on (VTO) pipeline such as for virtually trying on hair color products. Further provided is a color mapping network to process an input image and target hair color for the generative model to define the hair simulation (e.g. as an output image with simulated hair color).

Abstract: A method of manufacturing an image sensor comprising the forming of an opening in a substrate, the forming of a conductive pad covering the flanks of the opening and delimiting a gap in the opening, the forming of microlenses in a layer made of a first resin, the layer made of the first resin covering the pad and penetrating into the gap, the forming of a mask made of a second resin on top of and in contact with the layer made of the first resin, the chemical plasma etching of the layer made of the first resin, through the mask, delimiting a block of the first resin in the gap, the deposition of a protective layer on the microlenses and on the block, the removal of the portion of the protective layer covering the block, and the etching of the block.

Abstract: A method produces a microelectronics device by hybrid bonding of individual chips onto a handle wafer, of the Die-to-Wafer type, includes a flow protocol for thinning the rear substrate of the chips. The flow protocol includes a pre-thinning grinding of the rear substrate of the individual chips once they have been attached to the wafer. This grinding is preceded by the formation of a protective layer protecting the trenches formed by the spaces between the attached individual chips. Next, a rectification etching rectifies the height of the rear substrate of each of the attached individual chips, via chemical wet etching, to eliminate the Total Thickness Variation. This etching is selective with respect to an etch-stop element contained in the respective substrates of the attached chips and which is used to stop the etching at a level that is substantially uniform for each of the chips.

Abstract: The invention relates to a fluid circulation device comprising a casing containing an electric machine, a cycle-gas circuit subjecting the cycle gas to a change between a minimum pressure and a maximum pressure, a cycle-gas drive member rotationally coupled to the electric machine, an electrical junction box through which there passes electric circuitry having one end connected to the electric machine and one end connected to an electrical coupling open to the outside, the device comprising a cycle-gas conveying pipe connected to a portion of the circuit in which the cycle gas is at a pressure higher than the minimum pressure and to the inside of the junction box, the junction box comprising a passage for communicating with the inside of the casing, the conveying pipe, the passage and the return pipe being configured to bleed a fraction of the cycle gas from the circuit and pass it through the junction box with a view to cooling same before returning to the circuit.

Abstract: A method of the vapor-phase deposition of a sulfide layer of a transition metal by ALD according to the following cycle: exposing a substrate to a precursor of the transition metal, whereby an intermediate layer is formed, purging the reactor, exposing the intermediate layer to a precursor of sulfur, purging the reactor, the substrate being at a temperature in the range from 20° C. to 250° C. during the cycle, where the cycle can be repeated several times with the same precursors or with different precursors, the precursor of the transition metal being selected from among molybdenum oxyhalides, tungsten oxyhalides, vanadium halides, niobium halides, and tantalum halides.

Abstract: Method for manufacturing an aluminium alloy part by additive manufacturing that includes a step in which a layer of a mixture of powders is locally melted then solidified, wherein the mixture of powders includes: first particles that include at least 80 wt. % aluminium and up to 20 wt. % one or more additional elements, and second particles of ZrSi2, the mixture of powders including 1.8 wt. % to 4 wt. % second particles.

Abstract: A decontamination paste comprising at least one inorganic viscosifier selected from clays, at least one compound in the form of fibers and optionally further one or more optional components, the remainder being of solvent. A method for decontaminating a substrate made of a solid material using the paste, the substrate being contaminated by at least one contaminant species referred to as the labile contaminant species and/or by at least one contaminant species referred to as the surface contaminant species located on one of the surfaces thereof, and/or by at least one contaminant species referred to as the subsurface contaminating species located just below said surface, and/or by at least one contaminant species located under the surface in the depth of the substrate.

Abstract: An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Abstract: A light-emitting diode is provided, including: a first layer of n-doped AlX1Ga(1-X1-Y1)InY1N, with X1>0 and X1+Y1?1; a second layer of p-doped AlX2Ga(1-X2-Y2)InY2N, with X2>0 and X2+Y2?1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

Abstract: An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2: (R1)C?N ??[Formula 1] wherein in Formula 1, R1 is a C2 to C3 linear or branched perfluoroalkyl group, (R2)(R3)C?NH ??[Formula 2] wherein in Formula 2, each of R2 and R3 is independently a C1 to C2 linear perfluoroalkyl group.

Abstract: Methods, apparatus and technique embodiments localize objects using antialiasing such as for rendering an object with an effect for a virtual try on (VTO) experience. An example system comprises a nail localization engine including computational circuitry to localize one or more nail objects in an input image of a hand or foot via one or more deep neural networks, wherein the one or more deep neural networks is configured for antialiasing in each of the encoder and decoder components; and a rendering component including computational circuitry to render an output image simulating a nail product or nail service applied to the one or more nail objects, responsive to the localizing by the nail localization engine, to provide a virtual try on (VTO) experience. In an embodiment, respective blur operators in each of the encoders and decoders disperse values to neighboring regions to counteract shift variance.

Abstract: Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MS2 with M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.

Abstract: A method including generating an initialization vector, then producing a new mask using the generated initialization vector and using a secret key, masking a datum to be written to an internal cache memory using the constructed new mask, to obtain a masked datum, storing, in a given word of the internal cache memory, the masked datum and the generated initialization vector, and unmasking the masked datum, this including extracting the initialization vector contained in the word, reconstructing the mask using the extracted initialization vector and using the secret key, then unmasking the masked datum using the new mask thus reconstructed.