Abstract: An imaging device in accordance with the present disclosure comprises of a pixelated array of semiconductor detector elements, each of the pixels in the array having an in-pixel integrated circuit, the integrated circuit having a comparator, a readout decoder block, and an address arbitration control block. The readout decoder block reads out the integrated signals of the pixels. The address arbitration control block determines the pixel address of the pixels charging beyond a threshold voltage, the threshold exceedance determined by the comparator. The addressed pixels are provided a timestamp for each of the pixels integrating beyond the threshold voltage, the timestamp provided by an off-pixel time-to-digital converter (TDC), the value of the timestamp corresponding with the accumulated charge of the pixel.

Abstract: An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.