Abstract: Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by dissolving gaseous ozone into relatively cool inorganic acid, dispensing the acid ozone mixture onto a wafer, and rapidly heating the surface of the wafer to a temperature at least 30° C. higher than the temperature of the acid ozone mixture.

Abstract: A device for processing wafer-shaped articles includes a spin chuck for holding and rotating a wafer-shaped article about a rotation axis and at least one dispenser for dispensing liquid onto at least one surface of a wafer-shaped article. A liquid collector surrounds the spin chuck for collecting liquid spun off the substrate during rotation, with at least two collector levels for separately collecting liquids in different collector levels. At least one lifting device moves the spin chuck relative to the liquid collector. At least two exhaust levels are provided for separately collecting gas from an interior of the liquid collector. Each of the exhaust levels includes at least one opening communicating with an ambient exterior of the liquid collector and a door that closes and opens the opening. Each door on one of the exhaust levels can be opened and closed separately from each door on another exhaust level.