Abstract: A method for processing a wafer in a reaction chamber is provided. The method includes the following steps: performing an over-etching, so as to have a sufficient oxide-layer isolation depth between metal wires; applying high-bias, high-watt plasma, so as to remove a reaction polymer on a surface of the wafer, and to remove the reaction polymer on the surface of the reaction chamber; and performing a static-eliminating procedure, so as to remove the static charges on the wafer, and then delivering the wafer out of the reaction chamber. Through the method with the high-bias, high-watt plasma of the present invention, the following efficacies can be achieved: (1) eliminating blemishes on the produced wafer; (2) prolonging a corrosion time of an aluminum-copper wire on the surface of the wafer; (3) prolonging an average cycle period for cleaning the reaction chamber; (4) shortening the time in the next acid tank; and (5) enhancing the yield of each wafer by 2-5%.

Abstract: A waferless cleaning process of a dry etcher in semiconductor field, comprises the steps of: removing a batch of production wafers out of the chamber of the dry etcher, automatically starting waferless plasma cleaning to clean the chamber when at least a process factor reaches a preset condition, and loading next batch of production wafers into the chamber to undergo a normal production procedure. The process extends the meantime between wet clean (MTBC), prevents high particle counts, stabilizes the chamber condition, and improves process performance, tool uptime and throughput. The invention is characterized by not requiring any dummy wafers. Thus, the present invention does not need an operator. Besides, the present invention is capable of mixing different types of products.