Abstract: A substrate support assembly for use in an electrostatic chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating thermal conductance gas light-up. In one embodiment, the substrate support assembly includes a dielectric block having an upper surface for interfacing with a substrate support surface and a lower surface configured for interfacing with a baseplate. The assembly further includes a plurality of plug channels for introducing gas through the dielectric block to a temperature conduction region between the substrate support surface and a lower surface of the substrate. Each of plug channels contains a ceramic foam plug having a body and a pre-formed pore matrix that is integrally distributed through the body for reducing the mean free path of the gas.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant so as to form a polymerized organometallic material; and depositing the organometallic polymer-like material onto the surface of the semiconductor substrate. The mixing and depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. A clamp electrode assembly is positioned within an upper region of the ceramic layer. The clamp electrode assembly serves to clamp the substrate to the top surface of the ceramic layer and functions as a primary radiofrequency (RF) power delivery electrode. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the clamp electrode assembly at its respective location.

Abstract: A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber includes a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate. An edge seal including a compressible ring is mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate. At least one gas passage is in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove. The at least gas one passage extends through the base plate and includes a plurality of outlets in fluid communication with the annular space. In some examples, a backing seal may be located between the edge seal and an inner wall of the mounting groove.

Abstract: A plasma processing system having a plurality of stations is provided. Each station has a substrate support and a showerhead for supplying process gases. A radio frequency (RF) power supply and a distribution system is provided, where the distribution system is coupled to the RF power supply. A plurality of voltage probes is provided. Each of the plurality of voltage probes is connected in-line between the distribution system and each showerhead of each of the stations. A controller is configured to receive sensed voltage values from each of the plurality of voltage probes and compare the sensed voltage values against a plurality of voltage check bands. Each voltage check band is predefined for a process operation, and the controller is configured to generate an alert when the comparing detects that a sensed voltage value is outside of a voltage check band.

Abstract: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

Abstract: A charge volume configuration for use in delivery of gas to a reactor for processing semiconductor wafers is provided. A charge volume includes a chamber that extends between a proximal end and a distal end. A base connected to the proximal end of the chamber, and the base includes an inlet port and an outlet port. A tube is disposed within the chamber. The tube has a tube diameter that is less than a chamber diameter. The tube has a connection end coupled to the inlet port at the proximal end of the chamber and an output end disposed at the distal end of the chamber.

Abstract: A baseplate for a temperature controlled substrate support assembly in a vacuum chamber includes a single cavity in an upper surface of the base plate. A cylindrical wall extends upward around an outer perimeter of the base plate to define the cavity. A cover plate arranged on the base plate above the cavity is in thermal contact with the cylindrical wall of the base plate. A plurality of thermoelectric modules is arranged within the cavity in the upper surface of the base plate in thermal contact with the cover plate and the base plate and is sealed from the vacuum chamber and maintained at atmospheric pressure. A plurality of fluid channels is arranged within the base plate below the cavity. A plurality of heat transfer pipes extends downward toward the fluid channels from an upper surface of the base plate within the cavity.

Abstract: Provided herein are methods and apparatuses for forming metal films such as tungsten (W) and molybdenum (Mo) films on semiconductor substrates. The methods involve forming a reducing agent layer, then exposing the reducing agent layer to a metal precursor to convert the reducing agent layer to a layer of the metal. In some embodiments, the reducing agent layer is a silicon- (Si-) and boron- (B-) containing layer. The methods may involve forming the reducing agent layer at a first substrate temperature, raising the substrate temperature to a second substrate temperature, and then exposing the reducing agent layer to the metal precursor at the second substrate temperature. The methods may be used to form fluorine-free tungsten or molybdenum films in certain embodiments. Apparatuses to perform the methods are also provided.

Abstract: A semiconductor processing chamber is provided and may include a wafer transfer passage that extends through a chamber wall and has an inner passage surface defining an opening, an insert including an insert inner surface defining an insert opening, and a gas inlet. A first recessed surface of the wafer transfer passage extending at least partially around and outwardly offset from the inner passage surface, a first insert outer surface extending at least partially around and outwardly offset from the insert inner surface, and a first wall surface extending between the inner passage surface and the first recessed surface, at least partially define a gas distribution channel fluidically connected to the gas inlet, the first recessed surface is separated from the first insert outer surface by a first distance and an insert front surface faces and is separated from the first wall surface by a first gap distance.

Abstract: An assembly used in a process chamber for depositing a film on a wafer including a pedestal assembly having a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal. A raising mechanism separates the pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft extending from the lift pad, a lever rotatably attached to lift pad bracket, a ferroseal assembly surrounding the pad shaft, and a yoke assembly offsetting a moment to the ferroseal assembly when the lever rotates. When the pedestal assembly moves upwards, the lever rotates when engaging with the upper hard stop and roller, and separates the pad from the pedestal by a process rotation displacement.

Abstract: A showerhead for a plasma chamber comprises a resistive heater configured to receive power to heat the showerhead of the plasma chamber, and a resistive element thermally bonded to the showerhead of the plasma chamber. The resistive element changes resistance in response to a change in temperature of the showerhead. The resistive element is encapsulated in an insulating material to electrically insulate the resistive element from the showerhead. The insulating material is a good conductor of heat. The power to the resistive heater is received based on the resistance of the resistive element.

Abstract: An electrostatic chuck includes an embedded electrode receiving a first voltage to electrostatically attract a semiconductor substrate to the electrostatic chuck. A plurality of current loops are disposed in at least one of the electrostatic chuck and an edge ring surrounding the electrostatic chuck. The current loops are laterally spaced apart. Each current loop is a wire formed into a loop. One or more DC power sources are electrically connected to the current loops. A controller supplies the first voltage to the embedded electrode, supplies a DC current to the current loops from the power sources, and controls the power sources. Each current loop is independently operable and generates a localized DC magnetic field proximate to the semiconductor substrate on receiving the DC current during plasma processing of the semiconductor substrate to adjust the plasma processing of the semiconductor substrate. The localized DC magnetic field does not generate plasma.

Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: A substrate support for a plasma system includes a first layer being made of a ceramic and having a first surface and a second surface opposite the first surface. The first layer is configured to support a substrate on the first surface during processing. A thermal heating element is embedded within the ceramic. A temperature sensor that is embedded within the ceramic. Electrically conductive pads are: electrically connected to the temperature sensor via first wires embedded in the ceramic; and formed on the second surface of the first layer. A second layer includes a through hole through the second layer. A connector extends through the through hole and that includes: a retainer; and electrical conductors that are held by the retainer and that include: first ends that are electrically connected to the electrically conductive pads, respectively; and second ends that are electrically connected to a temperature controller by wire.

Abstract: An edge ring assembly is provided, including: an upper edge ring configured to surround an electrostatic chuck (ESC), the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface, the upper edge ring being disposed above the annular shelf; a lower inner edge ring disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower inner edge ring being defined from an electrically conductive material, the lower inner edge ring being electrically insulated from the ESC; a lower outer edge ring surrounding the inner edge ring, the lower outer edge ring being disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower outer edge ring being defined from an electrically insulating material.

Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion are described. By tuning the impedance matching network in a step-wise fashion instead of directly to achieve optimum values of a radio frequency (RF) and a combined variable capacitance, processing of a wafer using the tuned optimal values becomes feasible.

Abstract: A direct drive circuit for providing RF power to a component of a substrate processing system includes a clock generator to generate a clock signal at a first frequency, a gate driver to receive the clock signal and a half bridge circuit. The half bridge circuit includes a first switch with a control terminal connected to the gate driver, a first terminal and a second terminal; a second switch with a control terminal connected to the gate driver, a first terminal connected to the second terminal of the first switch and an output node, and a second terminal; a first DC supply to supply a first voltage to the first terminal of the first switch; and a second DC supply to supply a second voltage to the second terminal of the second switch. The first and the second voltages have opposite polarities and are approximately equal in magnitude.

Abstract: Methods and systems for using a time-series of spectra to identify endpoint of an etch process. One method includes accessing a virtual carpet that is generated from a time-series of spectra for an etch process. A polynomial with coefficients represents the virtual carpet. The method includes processing a fabrication etch process on a fabrication wafer and generating a carpet defined from a time-series of spectra while processing the fabrication etch process. While the processing the fabrication etch process and generating the carpet, comparing portions of the carpet and the virtual carpet to identify an endpoint metric of the fabrication etch process.