Abstract: Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.
Abstract: An apparatus for improving performance of a wafer polishing apparatus is described. The apparatus includes a platen in a support assembly having a plurality of fluid channels and at least one region of altered topography positioned on a portion of the platen surface.
Type:
Application
Filed:
August 8, 2001
Publication date:
February 13, 2003
Applicant:
Lam Research Corportion
Inventors:
Travis R. Taylor, Cangshan Xu, Kevin T. Crofton, Eugene Yuexing Zhao