Abstract: A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.

Abstract: A plasma processing system has a chamber, a workpiece holder in an interior of the chamber, a first power circuit, a second power circuit, and a feedback circuit. The first power circuit has a first power supply coupled to a first matching network. The first matching network is coupled to a coil adjacent to the chamber. The second power circuit has a second power supply coupled to a second matching network. The second matching network is coupled to the workpiece holder. The feedback circuit includes a radio frequency (RF) probe and a controller. The RF probe is partially disposed in an interior of the chamber. The controller is coupled to the RF probe and the first power circuit. The RF probe measures a change in plasma density in the interior of the chamber and the controller adjusts the first power supply in response to the change in plasma density.