Abstract: A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

Abstract: Systems and methods for determining a fault in a gas heater channel are described. One of the methods includes receiving measured parameters associated with a plurality of heater elements of the gas heater channel. The gas heater channel transfers one or more gases from a gas supply to a plasma chamber. The method further includes calculating a measured parallel resistance of the plurality of heater elements from the measured parameters, comparing the measured parallel resistance to an ideal parallel resistance of the heater elements of the gas heater channel, and determining based on the comparison that a portion of the gas heater channel is inoperational. The method includes selecting an identity of one of the heater elements from a correspondence between a plurality of identities of the heater elements and the measured parallel resistance.

Abstract: An assembly used in a process chamber for depositing a film on a wafer including a pedestal assembly having a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal. A raising mechanism separates the pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft extending from the lift pad, a lever rotatably attached to lift pad bracket, a ferroseal assembly surrounding the pad shaft, and a yoke assembly offsetting a moment to the ferroseal assembly when the lever rotates. When the pedestal assembly moves upwards, the lever rotates when engaging with the upper hard stop and roller, and separates the pad from the pedestal by a process rotation displacement.

Abstract: A device for measuring the distribution and/or impulse of a series of droplets comprises a piezoelectric sensor positioned relative to a source of droplets such that each of a plurality of droplets contacts the piezoelectric sensor in succession, thereby to generate an electrical signal. Logic circuitry is configured to calculate one or more frequencies from the electrical signal.

Abstract: Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line.

Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.

Abstract: In situ wafer metrology is conducted to reliably obtain deposition thickness for each successive layer in a multi-layer deposition. A wafer to be processed is positioned in a processing station of a deposition process tool, the process tool having a reflectometer metrology apparatus for optically determining thickness of a deposited layer on the wafer. Prior to commencing a deposition, the wafer is aligned in the processing station such that an optical metrology spot generated by the reflectometer metrology apparatus will align with an unpatterned central region of a die on a wafer during a deposition conducted on the wafer in the tool. Thereafter, the thickness of a deposited layer on the wafer is reliably measured and monitored in situ.

Abstract: An apparatus and system for plasma processing a substrate using RF power includes a chamber having walls for housing an electrostatic chuck (ESC) and a top electrode. The top electrode is oriented opposite the ESC to define a processing region. An inner line with a tubular shaped wall is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring within the chamber to provide an RF power return path during plasma processing.

Abstract: Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses may be suitable for etching non-volatile metals using a treatment while the movable pedestal is in the lowered position and a high pressure exposure to organic vapor while the movable pedestal is in the raised position.

Abstract: Disclosed herein are methods and related apparatus for formation of tungsten wordlines in memory devices. Also disclosed herein are methods and related apparatus for deposition of fluorine-free tungsten (FFW). According to various embodiments, the methods involve deposition of multi-component tungsten films using tungsten chloride (WClx) precursors and boron (B)-containing, silicon (Si)-containing or germanium (Ge)-containing reducing agents.

Abstract: A system for supplying precursor gas to a substrate processing chamber includes a first mass flow controller including an inlet to receive a carrier gas and an outlet. An ampoule is configured to supply a precursor gas. A valve system, in fluid communication with the first mass flow controller and the ampoule, is configured to supply the precursor gas and the carrier gas to a momentum-based flow restriction member. A pressure sensing system is configured to sense an inlet pressure at an inlet of the momentum-based flow restriction member and an outlet pressure at an outlet of the momentum-based flow restriction member. A controller is configured to determine a flow rate of the precursor gas at the outlet of the momentum-based flow restriction member based on a difference between the inlet pressure and the outlet pressure.

Abstract: The present inventors have conceived of a showerhead inlet with an annular plenum and radial flow paths into a central passage. A process gas, that may include a precursor and a carrier gas, may be flowed into the annular plenum. The annular plenum and central passage may contribute to the uniform mixing of the precursor and the carrier gas. Additionally, the radial passage may be angled upward to help more effectively purge any dead legs within the central passage. The central passage may also interface with a remote plasma source valve. The remote plasma source valve may control the flow of reactive species generated by a remote plasma source into the central passage.

Abstract: A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

Abstract: A method for estimating a temperature of a substrate includes generating plasma in a plasma processing system. The substrate is arranged on a substrate support structure in the plasma processing system. The plasma generates electromagnetic radiation that is incident upon a first surface of the substrate. The method further includes arranging a detector adjacent to a second surface of the substrate and in-situ the plasma processing system and measuring a signal intensity of electromagnetic radiation passing through the second surface of the substrate at N frequencies. The method includes selecting each of the N frequencies at which the signal intensity is measured by the detector to correspond to a phonon-generating frequency of a material in the substrate. The method includes converting the signal intensity at the N frequencies to N absorbance values and estimating a temperature of the substrate based on the N absorbance values.

Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.

Abstract: Apparatuses and methods are provided for depositing a metal layer on a wafer. A secondary weir is positioned at a region below the primary weir such that overflowed plating solution over the primary weir during electroplating flows in a substantially azimuthally uniform manner. Methods are provided for electroplating wafers by increasing flow rate between wafer processes while plating solution flows over a primary weir, remains in contact with the overflowing plating solution, and flows onto the secondary weir such that overflow is substantially azimuthally uniform.

Abstract: Systems and methods for performing edge ramping are described. A system includes a base RF generator for generating a first RF signal. The first RF signal transitions from one state to another. The transition from one state to another of the first RF signal results in a change in plasma impedance. The system further includes a secondary RF generator for generating a second RF signal. The second RF signal transitions from one state to another to stabilize the change in the plasma impedance. The system includes a controller coupled to the secondary RF generator. The controller is used for providing parameter values to the secondary RF generator to perform edge ramping of the second RF signal when the second RF signal transitions from one state to another.

Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

Abstract: An improved gas injection assembly for mounting in a central bore of a dielectric window of an inductively coupled plasma chamber includes a window having a central bore and cylindrical recess configured to receive an annular insert having a bayonet opening. The gas injector assembly includes a gas injector, an RF shield surrounding the gas injector, and a faceplate surrounding the RF shield, the faceplate including projections at the bottom thereof for engaging the bayonet opening in the annular insert. The window and gas injection assembly are designed to avoid chipping of the window which is typically made of quartz and in prior mounting arrangements the window has a bayonet opening machined therein. Due to the brittle nature of the quartz material, the machined bayonet opening was subject to chipping when the gas injector assembly was inserted into the bayonet opening.

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.