Abstract: Systems, methods, and devices related to detecting a presence of an analyte and/or determining a concentration of analytes are provided. An analyte may be provided on an LSPR-active surface. The LSPR-active surface may comprise sensitivity enhancing labels. The analyte may induce a local change near the LSPR-active surface. The LSPR-active surface may be imaged with an imaging device for images before, during, or after a reaction takes place. Local regions of interest within the images may be analyzed to detect the local changes.

Abstract: The present invention provides a method of detecting changes in the refractive index at the surface of a localized surface plasmon resonance (LSPR) detection system. The method includes generating an insoluble product from an enzymatic substrate using an immobilized enzyme, wherein the insoluble product accumulates at a LSPR supporting surface. The method also includes detecting changes in the reflected or transmitted light of the surface arising from the presence of the insoluble product using LSPR.

Abstract: An analytical device is disclosed. In one embodiment, the analytical device includes a three-dimensional substrate structure comprising a three-dimensional surface. A plurality of noble metal nanoparticles are on the three-dimensional substrate structure. A plurality of capture agents are on the noble metal nanoparticles.

Abstract: The present invention provides a method of detecting changes in the refractive index at the surface of a localized surface plasmon resonance (LSPR) detection system. The method includes generating an insoluble product from an enzymatic substrate using an immobilized enzyme, wherein the insoluble product accumulates at a LSPR supporting surface. The method also includes detecting changes in the reflected or transmitted light of the surface arising from the presence of the insoluble product using LSPR.

Abstract: The present invention provides a method of preparing a silica layer on a surface, the method comprising contacting the surface with a first alkoxysilane and a first base, such that a first siloxane layer is formed on the surface; and contacting the first siloxane layer with a combination of a binding alkoxysilane, a growth limiting alkoxysilane and a second base, such that a second siloxane layer forms on top of the first siloxane layer, wherein the silica layer is prepared at a temperature of less than 100° C., and wherein the growth limiting alkoxysilane limits the thickness of the silica layer to less than 100 nm, thereby preparing the silica layer.