Abstract: The present invention relates to a process for irradiating a processed surface (5) of a processed substrate (1) so as to obtain a predefined temperature profile, the processed surface (5) comprising a first area (11) and a second area (13), said first area (11) having a first combination of optical properties and thermal properties, and said second area (13) having a second combination of optical properties and thermal properties, said first combination and second combination being different. A further object of the invention is a system (21) for irradiating a processed surface (5) of a processed substrate (1) so as to obtain a predefined temperature profile, the processed surface (5) comprising a first area (11) and a second area (13), said first area (11) having a first combination of optical properties and thermal properties, and said second area (13) having a second combination of optical properties and thermal properties, said first combination and second combination being different.

Abstract: A method for thermally processing a substrate having a surface region and a buried region with a pulsed light beam, the substrate presenting an initial temperature-depth profile and the surface region presenting an initial surface temperature, including steps of: illuminating the surface region with a preliminary pulse so that it generates an amount of heat and reaches a predetermined preliminary surface temperature; and illuminating the surface region with a subsequent pulse after a time interval so that it reaches a predetermined subsequent surface temperature. The time interval is determined such that the surface region reaches a predetermined intermediate surface temperature greater than the initial surface temperature, such that during the time interval, the amount of heat is diffused within the substrate down to a predetermined depth so that the substrate presents a predetermined intermediate temperature-depth profile.

Abstract: An apparatus for measuring surface temperature of a substrate being illuminated by a pulsed light beam configured to heat the substrate and by a beam of probing light, wherein the heated substrate emits a radiated beam of thermal radiation, wherein the apparatus includes an optical system configured to collect the radiated beam and a reflected beam of probing light propagating in substantially close directions, wherein the collected radiated beam and the collected reflected beam are separately routed to a respective detector via a respective routing element, the respective detectors being configured to measure the intensity of the collected radiated beam and collected reflected beam simultaneously and at the same wavelength, wherein the surface temperature is calculated based on the collected radiated beam and on the collected reflected beam.

Abstract: Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.

Abstract: Disclosed is a low pressure wire ion plasma discharge source including an elongated ionization chamber housing at least two parallel anode wires extending longitudinally within the ionization chamber. A first of the at least two anode wires is connected to a DC voltage supply and a second of the at least two anode wires is connected to a pulsed voltage supply.

Abstract: Disclosed is a process for manufacturing a deep junction electronic device including steps of: b) Depositing a layer of non-monocrystalline semiconductor material on a plane surface of a substrate of a monocrystalline semiconductor material; c) Incorporating inactivated dopant elements prior to step b) into said substrate (1) and/or, respectively, during or after step b) into said layer, so as to form an inactivated doped layer; d) Exposing, an external surface of the layer formed at step b) to a laser thermal anneal beam, so as to melt said layer down to the substrate and so as to activate said dopant elements incorporated at step c); e) Stopping exposure to the laser beam so as to induce epi-like crystallization of the melted layer, so that said substrate and/or, respectively, an epi-like monocrystalline semiconductor material, comprises a layer of activated doped monocrystalline semiconductor material.

Abstract: A method for forming polysilicon on a semiconductor substrate that include providing amorphous silicon on a semiconductor substrate, exposing at least an area of the amorphous silicon to a first laser beam and a second laser beam, characterized in that during exposing the area to the second laser beam no displacement of the laser beam relative to the area occurs. In addition, the use of such method for producing large grain polysilicon. In particular, the use of such method for producing vertical grain polysilicon. Further, the use of such method for producing sensors, MEMS, NEMS, Non Volatile Memory, Volatile memory, NAND Flash, DRAM, Poly Si contacts and interconnects.

Abstract: An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.

Abstract: A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.

Abstract: The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.

Abstract: A method for stabilizing a plasma is disclosed. The method includes (a) providing in an ionization chamber a number of high voltage wires and a gas suitable for forming a plasma, and (b) exposing the gas to a high voltage thereby igniting the gas to form the plasma. Upon ignition, the plasma is subjected to an amount of light. A use of the method to generate X-rays is also disclosed. The invention is further directed to an ionization chamber including (a) a gas suitable for forming a plasma, and (b) a number of high voltage wires for exposing the gas to a high voltage thereby igniting the gas to form the plasma. The ionization chamber includes a device for subjecting the plasma upon ignition to an amount of light. The invention relates to an X-ray generator including such ionization chamber and to a laser apparatus including such X-ray generator.

Abstract: A method for forming polysilicon on a semiconductor substrate that include providing amorphous silicon on a semiconductor substrate, exposing at least an area of the amorphous silicon to a first laser beam and a second laser beam, characterized in that during exposing the area to the second laser beam no displacement of the laser beam relative to the area occurs. In addition, the use of such method for producing large grain polysilicon. In particular, the use of such method for producing vertical grain polysilicon. Further, the use of such method for producing sensors, MEMS, NEMS, Non Volatile Memory, Volatile memory, NAND Flash, DRAM, Poly Si contacts and interconnects.

Abstract: The gas circulation loop for a laser discharge tube includes a gas supply duct (a) and a gas exhaust duct (c), wherein the gas supply duct (a) and/or the gas exhaust duct (c) is elongated in the longitudinal direction of the laser discharge tube (b) and connected to the laser discharge tube (b) by an inlet flow distributor and, respectively an outlet flow distributor, adapted for controlled transversal gas inlet and, respectively outlet, over at least part of the laser discharge tube (b), and wherein the inlet flow distributor and/or the outlet flow distributor include a plurality of respective inlet channels or outlet channels, characterized in that the ratio between the diameter of the gas supply duct (a) and the diameter of the inlet channels, and/or the ratio between the diameter of the gas exhaust duct (c) and the diameter of the outlet channels is at least 2. A laser apparatus including such gas circulation loop is also described.

Abstract: An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution. The axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the use of such an apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement, is disclosed.

Abstract: The gas circulation loop for a laser discharge tube includes a gas supply duct (a) and a gas exhaust duct (c), wherein the gas supply duct (a) and/or the gas exhaust duct (c) is elongated in the longitudinal direction of the laser discharge tube (b) and connected to the laser discharge tube (b) by an inlet flow distributor and, respectively an outlet flow distributor, adapted for controlled transversal gas inlet and, respectively outlet, over at least part of the laser discharge tube (b), and wherein the inlet flow distributor and/or the outlet flow distributor include a plurality of respective inlet channels or outlet channels, characterized in that the ratio between the diameter of the gas supply duct (a) and the diameter of the inlet channels, and/or the ratio between the diameter of the gas exhaust duct (c) and the diameter of the outlet channels is at least 2. A laser apparatus including such gas circulation loop is also described.