Abstract: The present invention relates to the apparatus, system and method for dicing of semiconductor wafers using an ultrafast laser pulse of femtosecond and picosecond pulse widths directly from the ultrafast laser oscillator without an amplifier. Thin and ultrathin semiconductor wafers below 250 micrometer thickness, are diced using diode pumped, solid state mode locked ultrafast laser pulses from oscillator without amplification. The invention disclosed has means to avoid/reduce the cumulative heating effect and to avoid machine quality degrading in multi shot ablation. Also the disclosed invention provides means to change the polarization state of the laser beam to reduce the focused spot size, and improve the machining efficiency and quality. The disclosed invention provides a cost effective and stable system for high volume manufacturing applications.

Abstract: A method and apparatus for selective material removal and via drilling for semiconductor applications using an ultrafast laser pulse directly from an ultrafast pulse laser oscillator without amplification are disclosed. The method and apparatus includes techniques to avoid/reduce the cumulative heating effect and to avoid machine quality degrading in multi shot ablation. Also the disclosed method and apparatus provide a technique to change the polarization state of the laser beam to reduce the focused spot size, and to improve the machining efficiency and quality. The disclosed method and apparatus provide a cost effective and stable system for high volume manufacturing and inspection applications.