Abstract: A semiconductor apparatus with improved heat removal and improved heat flow to a heat sink is provided. The semiconductor apparatus includes a p-type semiconductor. An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor. A metal contact layer is connected to the n-p tunnel junction through an alloyed n-type contact interface. The n-p tunnel junction improves heat flow from the semiconductor through an alloyed contact interface formed between the tunnel junction and the metal contact layer which has lower thermal and electrical resistance in comparison to a conventional metallurgically abrupt interface of a p-type contact.
Abstract: A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.
Type:
Grant
Filed:
December 28, 2009
Date of Patent:
May 17, 2011
Assignee:
Lasertel, Inc.
Inventors:
Prabhu Thiagarajan, Mark McElhinney, John J. Cahill
Abstract: A laser diode array is formed on a heat sink having an insulating layer in which a plurality of grooves is formed through the ceramic layer and to or into the heat sink. A laser diode stack is soldered to the ceramic layer.
Type:
Grant
Filed:
July 26, 2007
Date of Patent:
January 4, 2011
Assignee:
Lasertel, Inc.
Inventors:
Prabhu Thiagarajan, Mark McElhinney, Jason Helmrich, Feliks Lapinski
Abstract: A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.
Type:
Grant
Filed:
April 17, 2008
Date of Patent:
February 9, 2010
Assignee:
Lasertel, Inc.
Inventors:
Prabhu Thiagarajan, Mark McElhinney, John J. Cahill