Abstract: An integrated semiconductor device comprising a wavelength-tunable laser, such as a distributed Bragg reflector (DBR) laser, where the laser has a gain section that includes an active layer, and a grating section that includes an active layer and a current-induced grating. A first electrical contact is provided over the gain section to supply current to the gain section and control the output power of the light, and a second electrical contact is provided over the grating section to supply current to the grating section and control the wavelength of the emitted light. The current-induced grating of the present device causes gain in the active layer of the laser to be modulated spatially in the direction of light propagation, thus resulting in only one of the degenerate Bragg modes to oscillate. As the degeneracy of the Bragg modes is broken by current-injection, and not facet reflection, substantially continuous wavelength tuning is possible without the deleterious phenomenon of “mode hopping.

Abstract: An integrated electroabsorption modulated laser (EML) device includes a distributed feedback (DFB) laser and modulator. The DFB laser includes an active layer and a complex index grating. The modulator includes an active layer. The EML device includes a first electrical contact over the DFB laser and a second electrical contact over the modulator. The EML device includes a stop etch layer above the active layer of both the DFB laser and the modulator. An electroabsorption modulated partial grating laser (EMPGL) device includes a distributed feedback (DFB) laser, an amplifier and a modulator. An ion implantation region in the EML/EMPGL devices provides electrical isolation between the DFB laser/amplifier and the modulator.

Abstract: A technique for passive alignment of an opto-electronic device, such as laser, by alignment fiducials to a silicon wafer board utilizes a tilted notch in the opto-electronic device. This system overcomes limitations using standard etched notches for previous passive alignment systems. Specifically, the tilted notch presents a range of offset distances between the edge of the notch and the active light-emitting spot of the laser. Depending on the location at which the wafer is diced or cleaved, the distance from the notch on the laser to the laser stripe can be adjusted after the laser wafer is fabricated.