Patents Assigned to Lawrence Berkeley Laboratory
  • Publication number: 20120315538
    Abstract: Porous electrodes in which the porosity has a low tortuosity are generally provided. In some embodiments, the porous electrodes can be designed to be filled with electrolyte and used in batteries, and can include low tortuosity in the primary direction of ion transport during charge and discharge of the battery. In some embodiments, the electrodes can have a high volume fraction of electrode active material (i.e., low porosity). The attributes outlined above can allow the electrodes to be fabricated with a higher energy density, higher capacity per unit area of electrode (mAh/cm2), and greater thickness than comparable electrodes while still providing high utilization of the active material in the battery during use. Accordingly, the electrodes can be used to produce batteries with high energy densities, high power, or both compared to batteries using electrodes of conventional design with relatively highly tortuous pores.
    Type: Application
    Filed: April 9, 2012
    Publication date: December 13, 2012
    Applicants: Massachusetts Instituteof Technology, The Regents of the University of Michigan, Lawrence Berkeley Laboratory
    Inventors: Yet-Ming Chiang, Chang-Jun Bae, John William Halloran, Qiang Fu, Antoni P. Tomsia, Can K. Erdonmez
  • Patent number: 5849427
    Abstract: A secondary zinc air cell, or another selected metal air cell, employing a spouted/packed metal particle bed and an air electrode. More specifically, two embodiments of a cell, one that is capable of being hydraulically recharged, and a second that is capable of being either hydraulically or electrically recharged. Additionally, each cell includes a sloped bottom portion to cause stirring of the electrolyte/metal particulate slurry when the cell is being hydraulically emptied and refilled during hydraulically recharging of the cell.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: December 15, 1998
    Assignee: Lawrence Berkeley Laboratory
    Inventors: Stanley C. Siu, James W. Evans
  • Patent number: 5612986
    Abstract: Methods for forming X-ray images having 0.25 .mu.m minimum line widths on X-ray sensitive material are presented. A holgraphic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation for transmission of the X-rays. A second embodiment uses off-axis holography. The wafer receives the holographic image by grazing incidence reflection from a hologram printed on a flat metal or other highly reflecting surface or substrate.
    Type: Grant
    Filed: September 22, 1995
    Date of Patent: March 18, 1997
    Assignee: Lawrence Berkeley Laboratory, University of CA
    Inventors: Malcolm S. Howells, Chris Jacobsen