Abstract: The invention relates to a method for measuring characteristics, especially the temperature of a multi-layer material during the build-up of the layers, especially of a stratified semiconductor system during epitaxy under constant process conditions.
Type:
Application
Filed:
November 30, 2001
Publication date:
August 22, 2002
Applicant:
LayTec Gesellschaft fur in-situ und nano-Sensork mbH