Abstract: Provided is a method of manufacturing a semiconductor package, the method including a first step for forming a primary solder ball on an under bump metallurgy (UBM) structure, and a second step for forming a secondary solder ball on an upper surface of the UBM structure by performing a reflow process on the primary solder ball while a side wall of the UBM structure is exposed.

Abstract: Provided is a method of manufacturing a semiconductor package, the method including a first step for forming a primary solder ball on an under bump metallurgy (UBM) structure, and a second step for forming a secondary solder ball on an upper surface of the UBM structure by performing a reflow process on the primary solder ball while a side wall of the UBM structure is exposed.

Abstract: Provided is a method of manufacturing a bump structure, the method including a first step for preparing a wafer including a plurality of chips each including a die pad, an under bump metal (UBM) layer on the die pad, and a bump pattern on the UBM layer, a second step for attaching a backgrinding film to an upper surface of the wafer, a third step for grinding a rear surface of the wafer by a certain thickness, a fourth step for forming a flexible material layer on a second rear surface of the wafer after being ground, and then attaching dicing tape including a ring frame, to the flexible material layer, a fifth step for removing the backgrinding film and then performing a curing process to harden the flexible material layer, and a sixth step for performing a dicing process to cut the plurality of chips into individual chips.

Abstract: Provided is a method of manufacturing compliant bumps, the method including preparing an electronic device including at least one conductive pad, forming an elastic resin layer on the electronic device, forming a photoresist layer on the elastic resin layer, forming a first photoresist pattern on a region spaced apart from a region where the conductive pad is located, forming a second photoresist pattern having a lower cross-sectional area greater than an upper cross-sectional area, forming an elastic resin pattern having a lower cross-sectional area greater than an upper cross-sectional area, on a region spaced apart from a region where the conductive pad is located, and forming a conductive wiring pattern covering at least a part of the elastic resin pattern and extending to the conductive pad.

Abstract: Provided is a method of manufacturing a semiconductor package, the method including forming sawing grooves by sawing a wafer along individual chip boundaries in a downward direction from a top surface of the wafer by a thickness less than a wafer thickness, filling the sawing grooves with a molding material, forming a redistribution pattern, a passivation pattern, and an under bump metal (UBM) pattern on the wafer, bonding solder balls onto the UBM pattern, thinning the wafer based on a backgrinding process, and dividing the wafer into individual chips by sawing the molding material filled in the sawing grooves, in a downward direction.

Abstract: The present invention relates to a method for manufacturing a bump structure capable of enhancing adhesion, comprising the steps of: forming an under bump metal (UBM) layer on a conductive pad; forming a copper bump on the UBM layer by electrolytic plating; forming a nickel bump on the copper bump by electrolytic plating; forming a first gold bump on the nickel bump by electrolytic plating using a first gold plating solution; and forming a second gold bump on the first gold bump by electrolytic plating using a second gold plating solution, wherein the second gold plating solution contains thallium (Tl) and the first gold plating solution is free of thallium.

Abstract: Provided is a method of manufacturing a semiconductor package, the method including a first step for forming a primary solder ball on an under bump metallurgy (UBM) structure, and a second step for forming a secondary solder ball on an upper surface of the UBM structure by performing a reflow process on the primary solder ball while a side wall of the UBM structure is exposed.