Abstract: Disclosed is a method of fabricating a semiconductor package, the method including forming a first resin material, in which alignment grooves are formed, on a carrier substrate; respectively aligning semiconductor chips, to which posts are respectively attached, in the alignment grooves; forming a second resin material on the carrier substrate, the semiconductor chips, and the posts; grinding a portion of the second resin material such that portions of the posts are exposed; respectively forming redistribution layers on the exposed posts; respectively forming insulating film patterns or UBM patterns on the redistribution layers; respectively bonding solder balls onto the redistribution layers or the UBM patterns; removing the carrier substrate from the first resin material and the semiconductor chips; and sawing the first resin material and the second resin material to separate into individual chips.

Abstract: Disclosed is a method of fabricating a semiconductor package, the method including sawing a portion of the thickness of a substrate downward from an upper surface of the substrate along a boundary region between individual chips to form a sawing groove; forming a resin material on the sawing groove and the substrate; removing portions of the resin material to form post spaces on the substrate; filling a conductive material into the post spaces to form posts; respectively forming redistribution layers on the posts; respectively forming insulating film patterns or under bump metal (UBM) patterns on the redistribution layers; respectively bonding solder balls onto the redistribution layers or the UBM patterns; and sawing the resin material to separate into individual chips.