Patents Assigned to Leader Well Technology Co., Ltd.
  • Process for producing surge absorbing material with dual functions
    Patent number: 8313672
    Abstract: A kind of manufacturing method for dual functions with varistor material and device has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: November 20, 2012
    Assignee: Leader Well Technology Co., Ltd.
    Inventors: Yu-Wen Tan, Jie-An Zhu, Li-Yun Zhang
  • Process for producing surge absorbing material with dual functions
    Publication number: 20090321691
    Abstract: A kind of manufacturing method for dual functions with varistor material and device has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic.
    Type: Application
    Filed: September 3, 2009
    Publication date: December 31, 2009
    Applicant: LEADER WELL TECHNOLOGY CO., LTD.
    Inventors: Yu-Wen Tan, Jie-An Zhu, Li-Yun Zhang
  • Surge absorbing material with dual functions
    Publication number: 20080286582
    Abstract: A surge absorbing material with dual functions has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic.
    Type: Application
    Filed: May 18, 2007
    Publication date: November 20, 2008
    Applicant: LEADER WELL TECHNOLOGY CO., LTD.
    Inventors: Yu-Wen Tan, Jie-An Zhu, Li-Yun Zhang