Abstract: A trench-gate transistor device includes a substrate and a transistor structure. The transistor structure includes a plurality of superjunctions arranged in a first direction, a rectifying area that has at least one Schottky-based diode, and at least one active unit that is located at a side of said rectifying area in a second direction that intersects with the first direction.

Abstract: A test system includes a to-be-tested die including a to-be-tested transistor and a sense transistor, and a test device including a signal amplifying unit, a testing unit, and a probe card connecting the signal amplifying unit and the testing unit to the die. The signal amplifying unit has a first terminal connected to the to-be-tested transistor, and second and third terminals connected to the sense transistor. The signal amplifying unit stabilizes voltages at the second and third terminals based on a voltage at the first terminal, and generates an amplification voltage based on the voltages at the first to third terminals. The testing unit provides test signals to the to-be-tested transistor, determines magnitudes of currents flowing through the to-be-tested transistor and the sense transistor based on the test signals, the amplification voltage and a predetermined resistance, and thus acquires a current ratio to determine whether the die is defective.

Abstract: A transistor production method includes etching a semiconductor substrate to form at least one upper trench portion, sequentially depositing first and second insulating materials over the substrate and partially removing the second insulating material, etching the substrate to form a lower trench portion, depositing a third insulating material over the substrate, disposing a polycrystalline silicon (pc-Si) material in the trench portions and partially removing such material, depositing a fourth insulating material over the substrate and partially removing the third and fourth insulating materials, removing the second insulating material and disposing another pc-Si material in the upper trench portion, and forming a well and a source on the substrate. A trench power transistor thus produced is also disclosed.

Abstract: A trench power transistor includes a semiconductor body having opposite first and second surfaces, and including at least one active region. Such region includes a trench electrode structure, a well, and a source. The trench electrode structure has an electrode trench recessed from the first surface, and includes first, second, and third insulating layers sequentially disposed over bottom and surrounding walls of the electrode trench, a shield electrode enclosed by the third insulating layer, a fourth insulating layer disposed on the first, second, and third insulating layers, and a gate electrode surrounded by the fourth insulating layer. The second insulating layer made of a nitride material and the fourth insulating layer are different in material. A production method of the transistor is also disclosed.