Abstract: Substrate loading and unloading apparatus for automated loading and unloading of substrates (S) in a vacuum environment, for example the work region (A) of an electron beam lithography machine, comprises a substrate holder (13) with a substrate support table (17) and locating means (18 to 21) co-operable with the table to cause a supported substrate (S) to be pressed against and thereby located on the table (17). A vacuum vessel (10) defines a loading and unloading chamber (11) with a transfer port (12) which is communicable with the evacuated region (A) of the machine and permits transfer of the holder (13) between the chamber (11) and the region (A) entirely within the vacuum environment. Release means (22, 23; 28 to 33) are present to withhold the co-operation of the table and locating means and to provide a temporary substrate support clear of the table so that substrates can be transferred to and from the table.

Abstract: The invention is directed to electrostatic deflection systems for corpuscular beams which can be used particularly in microstructured and nanostructured applications in lithography installations or measuring equipment. According to the proposed object of the invention, the individual electrodes of a deflection system of this kind should permanently have and retain a very exact axially symmetric arrangement relative to one another. In the electrostatic deflection system according to the invention, rod-shaped electrodes are held in an axially symmetric arrangement in an inwardly hollow carrier through which a corpuscular beam can be directed. The carrier is formed of at least two, and at most four, carrier members which are connected to one another.

Abstract: A device and a method for imaging and positioning a multiparticle beam on a substrate is disclosed. The device comprises a particle beam source with a condenser optic that produces a particle beam that illuminates the surface of an aperture plate. A multiplicity of individual beams are produced from the particle beam by means of the aperture plate, which are then projected by a projection system onto a substrate where they describe a beam base point. The substrate or target, respectively, is placed on a table that is movable along an x-coordinate and a y-coordinate, and that is provided with a laser path measurement system.

Abstract: A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters ?, ? and ?, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters ?, ? and ? of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.

Abstract: A method is disclosed in which the speed of the substrate carrier system 50 is changed during exposure depending on the exposure pattern density. The substrate carrier system 50 defines a track curve 60, whereby the exposure pattern is exposed within a band (621, 622, . . . 623) around the track curve.

Abstract: A dual-mode electron beam lithography machine (10) comprises an electron beam column (11) for generating an electron beam (12) for writing a pattern on a surface of a substrate 14) by way of a writing current, the substrate being supported on a stage (13) movable to displace the substrate relative to the beam. The column (10) includes beam deflecting plates (16) for deflecting the beam to scan the substrate surface in accordance with the pattern to be written and beam blanking plates (15) for blanking the beam to interrupt writing. The machine further comprises control means (17 to 20) for changing each of writing current, stage movement, beam deflection and beam blanking between a predetermined first mode optimised for pattern-writing accuracy, thus resolution, and a predetermined second mode different from the first mode and optimised for pattern-writing speed, thus throughput.

Abstract: A device and a method for imaging and positioning a multiparticle beam on a substrate is disclosed. The device comprises a particle beam source with a condenser optic that produces a particle beam that illuminates the surface of an aperture plate. A multiplicity of individual beams are produced from the particle beam by means of the aperture plate, which are then projected by a projection system onto a substrate where they describe a beam base point. The substrate or target, respectively, is placed on a table that is movable along an x-coordinate and a y-coordinate, and that is provided with a laser path measurement system.

Abstract: A device for influencing an electron beam, for example a beam deflecting device in an electron beam lithography machine, comprises a beam influencing coil (13) operable to influence an electron beam (EB) in the vicinity of the device by way of a magnetic field and a heat dissipation compensating coil (14) operable to provide a heat output so compensating for any change in heat dissipation of the device due to operation of the beam influencing coil (13)—particularly variable operation to vary the field intensity or to create and remove a field—as to reduce the amount of change, preferably to maintain the net heat dissipation at a constant value. The compensating coil (13) can be controlled, for example, by measurement (19) of the heat dissipation of the device and calculating (18) current supply (16) to the coil (13) in dependence on the measured dissipation.

Abstract: A device for influencing an electron beam, for example a beam deflecting device in an electron beam lithography machine, comprises a beam influencing coil (13) operable to influence an electron beam (EB) in the vicinity of the device by way of a magnetic field and a heat dissipation compensating coil (14) operable to provide a heat output so compensating for any change in heat dissipation of the device due to operation of the beam influencing coil (13)—particularly variable operation to vary the field intensity or to create and remove a field—as to reduce the amount of change, preferably to maintain the net heat dissipation at a constant value. The compensating coil (13) can be controlled, for example, by measurement (19) of the heat dissipation of the device and calculating (18) current supply (16) to the coil (13) in dependence on the measured dissipation.

Abstract: A device for influencing an electron beam, in particular a beam deflector (10), comprises a cylindrical support body (11) with an axial passage (12) through which the beam can propagate and axially spaced sets of coils (14) supported by the body and operable by electrical energy to produce electromagnetic fields for deflection of the beam. The device includes a cooling system for counteracting temperature rise in the body (11) due to operation of the coils (14). The system comprises a pipe (15) of compliant material extending helically around and thermally conductively coupled, preferably adhesively bonded, to the support body (11) and serving to conduct liquid coolant for heat exchange with the body (11) over substantially all the external circumferential surface thereof.

Abstract: Method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which are conform to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimised set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.

Abstract: A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters ?, ? and ?, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters ?, ? and ? of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.

Abstract: A device for influencing an electron beam, especially a deflector unit for an electron beam lithography machine, comprises a plurality of coil formers (12b) each with a bore (16) defining a passage for the beam and each carrying coils (18, 19) operable to generate magnetic fields for deflecting the path of the beam when passing through the passage. Each former is made of a high-strength ceramic material having a high thermal conductivity and low coefficient of thermal expansion so that, with respect to a given output of heat by the associated coils during quasi-continuous operation for repeated beam deflection during pattern writing, the heat is dissipated at such a rate as to preclude thermal expansion of the coils and thus avoid distortion of the magnetic fields generated by the coils.

Abstract: A stage (10) for a workpiece comprises an upper member (13) for carrying a workpiece holder (15), a lower member (12) and two guide assemblies (16) mounting the upper member (13) on the lower member (12) to be rectilinearly displaceable relative thereto. The lower member (12) is in turn preferably similarly mounted on a fixed base plate (11) by further such guide assemblies (16), the two members (12, 13) being respectively displaceable in an X direction and a Y direction. At least one of the members (12 or 13), but preferably both members and also the base plate (11), is made of a machinable lightweight composite, for example aluminium alloy and silicon carbide, having a coefficient of thermal expansion not exceeding that of the principal material of the guide assemblies by more than substantially 50%, preferably by no more than 30 to 35%.

Abstract: A dual-mode electron beam lithography machine (10) comprises an electron beam column (11) for generating an electron beam (12) for writing a pattern on a surface of a substrate 14) by way of a writing current, the substrate being supported on a stage (13) movable to displace the substrate relative to the beam. The column (10) includes beam deflecting plates (16) for deflecting the beam to scan the substrate surface in accordance with the pattern to be written and beam blanking plates (15) for blanking the beam to interrupt writing. The machine further comprises control means (17 to 20) for changing each of writing current, stage movement, beam deflection and beam blanking between a predetermined first mode optimised for pattern-writing accuracy, thus resolution, and a predetermined second mode different from the first mode and optimised for pattern-writing speed, thus throughput.

Abstract: The invention is based on a method for examining structures on a semiconductor substrate. The structures are imaged with X-radiation in an X-ray microscope. The wavelength of the X-radiation is established as a function of the thickness of the semiconductor substrate in such a way that both a suitable transmission of the X-radiation through the semiconductor substrate and a high-contrast image are obtained. As a result, the structures can be observed continuously with short exposure times, high resolution and even while they are in operation.

Abstract: Pattern-writing equipment for writing a pattern on the surface of an substrate (S) by electron beam lithography comprises electron beam generating means, such as an electron source (10) and anode (12), focusing means (13, 14, 16, 19, 20) for focusing the beam to produce a writing spot on the substrate surface, and a beam deflector for displacing the writing spot on the substrate surface to trace the pattern to be written. Also present in the equipment are control means for varying the writing spot size to produce a simultaneous increase or simultaneous decrease in both spot size and writing current. The focusing means is distinguished by two lens sets each containing a high focal strength main lens (13 or 14) and a low focal strength auxiliary lens (19 or 20). The control means varies the writing spot size by causing a reciprocal change in the focal strengths of the two auxiliary lens (19, 20) while writing is being carried out.

Abstract: A method of writing a pattern on the surface of a substrate by an electron beam is provided comprising exposing the substrate surface to an electron beam controlled to progressively describe the pattern by stepped movement of a focussed spot of the beam over the surface, and varying the exposure of the surface to the beam by selectably modulating the beam in the periods between successive movement steps to reduce the level of electron dose in predetermined positions of the beam spot on the surface.

Abstract: In a method for forming, with the aid of an electron beam (6), a polyline on a substrate (4) coated with a radiation-sensitive resist, the electron beam (6) is directed onto a surface of the substrate (4) in the direction of a Z coordinate, and the substrate (4) is displaced relative to the electron beam (6) in an X-Y plane in individual steps. After each individual step of the displacement, the electron beam (6) acts with a predefined energy input on the substrate (4) during a halt in the displacement motion. The energy input for each individual step is determined as a function of the shape of the polyline ascertained from several preceding individual steps. Also described is a corresponding apparatus with which, using electron beam lithography, it is possible to form polylines with a very uniform line width. The method and apparatus are particularly suitable for writing curved polylines.

Abstract: A device for influencing an electron beam, in particular a beam deflector (10), comprises a cylindrical support body (11) with an axial passage (12) through which the beam can propagate and axially spaced sets of coils (14) supported by the body and operable by electrical energy to produce electromagnetic fields for deflection of the beam. The device includes a cooling system for counteracting temperature rise in the body (11) due to operation of the coils (14). The system comprises a pipe (15) of compliant material extending helically around and thermally conductively coupled, preferably adhesively bonded, to the support body (11) and serving to conduct liquid coolant for heat exchange with the body (11) over substantially all the external circumferential surface thereof.