Patents Assigned to Lepton Inc.
  • X-ray masks, their fabrication and use
    Patent number: 5020083
    Abstract: An X-ray mask for manufacturing chips is produced by forming an X-ray transparent semiconductor membrane with gaps and including X-ray transparent material in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.
    Type: Grant
    Filed: May 19, 1989
    Date of Patent: May 28, 1991
    Assignee: Lepton Inc.
    Inventors: Martin P. Lepselter, Herbert A. Waggener
  • Method for fabricating X-ray masks
    Patent number: 4932872
    Abstract: In the disclosed method, an X-ray mask is made by forming a semiconductor wafer having a first coefficient of expansion, doping a surface of the wafer, metallizing the wafer, metallizing a washer shaped ring having a lower coefficient of expansion, bonding the ring to the doped surface at the periphery of the wafer at or above room temperature, and processing the wafer by removing the undoped substrate and depositing metallic material on the wafer.
    Type: Grant
    Filed: June 16, 1989
    Date of Patent: June 12, 1990
    Assignee: Lepton Inc.
    Inventor: Herbert A. Waggener