Abstract: An apparatus for exposing a radiation sensitive workpiece to define patterns therein includes an electron gun, a mask with spaced apertures for passing electron radiation, and a radiation deflector-blanker to direct the radiation to selected ones of the apertures and to form separate beamlets from the apertures then demagnify the separate beamlets and direct them onto the workpiece without crossing them. In one embodiment, the groups of apertures are fixed on the mask and define fixed undivided profiles in the path of the radiation.
Type:
Grant
Filed:
April 28, 1993
Date of Patent:
October 3, 1995
Assignee:
Lepton, Inc.
Inventors:
Martin P. Lepselter, Sheldon M. Kugelmass
Abstract: An X-ray mask for manufacturing chips is produced by forming an X-ray transparent semiconductor membrane with gaps and including X-ray transparent material in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.
Type:
Grant
Filed:
May 19, 1989
Date of Patent:
May 28, 1991
Assignee:
Lepton Inc.
Inventors:
Martin P. Lepselter, Herbert A. Waggener
Abstract: In the disclosed method, an X-ray mask is made by forming a semiconductor wafer having a first coefficient of expansion, doping a surface of the wafer, metallizing the wafer, metallizing a washer shaped ring having a lower coefficient of expansion, bonding the ring to the doped surface at the periphery of the wafer at or above room temperature, and processing the wafer by removing the undoped substrate and depositing metallic material on the wafer.