Abstract: A method and apparatus is disclosed for identifying a block being stored within flash memory devices using a cluster address for each block, the block being selectively erasable and having one or more sectors, the cluster address being stored in one of the sectors of the block. In an alternative embodiment, the cluster address is stored in at least two different sectors within the same block for ensuring that the information last written to the block is valid. Further disclosed is a novel way to use a defect flag for each block stored within the flash memory device for efficiently identifying non-defective blocks upon system power-up.

Abstract: A circuit is provided for selecting one of plurality of integrated circuit chips with a minimum number of chip select signal lines. A first embodiment includes a plurality of paired address lines; each line in each pair provides a logical complementary signal. Only a selected one of the lines of each pair is coupled to integrated circuit. Each of the integrated circuits is coupled to a unique combination of these selected lines of the pairs. In a second embodiment a select signal is clocked by a controller from one of the integrated circuits to the next in a fashion similar to a shift register. Once the select signal is present in the desired integrated circuit, the controller then provides an enable signal to all the integrated circuits which enables only that desired integrated circuit. In yet another embodiment, the address lines are also used a chip select signal lines, one address line for each integrated circuit. A Chip.sub.-- select.sub.-- clock.sub.

Abstract: A microprocessor-controlled solid state storage system having a controller and non-volatile memory for storing firmware code therein. The controller includes first memory for storing firmware code transferred from the non-volatile memory, and second memory including primitive firmware code stored therein causing execution of a microprocessor for transferring the firmware code from reserved blocks in the non-volatile memory into the first memory upon initialization of the storage system and causing calculation of a checksum for verification of the integrity of the firmware code.

Abstract: A multi-level NAND architecture non-volatile memory device reads and programs memory cells, each cell storing more than one bit of data, by comparing to a constant current level while selectively adjusting the gate voltage on the cell or cells being read or programmed. A plurality of read and write reference cells are provided each programmed to correspond to one each of the multi-level programming wherein during reading of the memory cells, the read reference cells provide the constant current level and during writing to the memory cells, the write reference cells provide the same. Furthermore, during a read operation, corresponding write reference cells are coupled to read reference cells to gauge the reading time associated with reading of memory cells.