Patents Assigned to LEXAS RESEARCH, LTD.
  • Method and Apparatus for Measuring Process Parameters of a Plasma Etch Process
    Publication number: 20100216263
    Abstract: Method and apparatus for measuring process parameters of a plasma etch process. A method for detecting at least one process parameter of a plasma etch process being performed on a semiconductor wafer. The method comprises the steps of detecting light being generated from the plasma during the etch process, filtering the detected light to extract modulated light; and processing the detected modulated light to determine at least one process parameter of the etch process.
    Type: Application
    Filed: January 31, 2008
    Publication date: August 26, 2010
    Applicant: LEXAS RESEARCH, LTD.
    Inventors: Stephen Daniels, Shane Glynn, Felipe Soberon, Maria Tipaka