Abstract: Automatic loading mechanism for automatically transferring semiconductor wafers from storage cassettes onto disk shaped electrodes carried on a hexagonal electrode structure within a plasma reaction chamber. The system includes a reactor chamber, a transport mechanism for transporting semiconductor wafers from storage cassettes and to storage cassettes and a loading mechanism for transferring semiconductor wafers from said transport mechanism onto the electrode structure within the reactor chamber and for transferring processed wafers from said reactor chamber back to said transport means for transport to an output cassette.

Abstract: A process for a selective plasma-based reactive ion etching of aluminum and aluminum alloys with silicon and copper, employing gas mixtures having BCl.sub.3 as a major constituent and Cl.sub.2, SiF.sub.4, and O.sub.2 as the minor constituents. The major constituent should constitute 40% to 65% by volume of the mixture.

Abstract: A two mode operable piston pump has a cam lock with a shaft biased into the drive axial passage of a cam shaft to lock the cam shaft to a lever body, a lock edge on the lever body engaging a flat on a head portion of the cam lock. Inserting a power tool into the drive axial passage opposite the head pushes the shaft up and releases the cam shaft for operation of the pump in a power mode.

Abstract: The admission of a gas to a reaction chamber which has been previously evacuated is followed by its excitation by either a high-frequency electrostatic field or an electromagnetic field, formed by capacitor plates or a coil, respectively, which envelops the outer wall of the reaction chamber. A perforated metallic cylinder is disposed within the chamber concentrically with the long axis of the chamber and comprises the material-handling zone of the chamber. The activated gas reacts with material placed within the perforated cylinder, during which reaction inactive gas and resultant gaseous byproducts are continuously withdrawn. The construction of the chamber and the internal perforated metallic cylinder are such as to provide very uniform distribution of gaseous excited species throughout the entire material-processing volume within the cylinder thereby promoting very uniform chemical conversions of practical interest.

Abstract: A process for etching polysilicon material preferentially over silicon oxide. The process is anisotropic and employs a moderate to low pressure of Freon 11 (CFCl.sub.3) in an RF plasma discharge. In a second embodiment helium is mixed with the Freon 11 to inhibit degradation of the photoresist mask.

Abstract: A clamp on ultrasonic transducer having a clamping element which can be positioned around a conduit with the inner portion of the clamping element being formed to fit closely against the outer wall of the conduit, thus defining at a selected position along the conduit a transverse reference plane. The clamping element carries on it one or more channels extending parallel to the axis of the conduit with ultrasonic transducing elements adjustably mounted on those channels such that their contact pressure with the conduit can be independently adjusted. The ultrasonic transducing elements then form a path of ultrasonic interrogation in a plane parallel to the axis of the conduit and at a position defined by the transverse reference plane.

Abstract: A process step for use in the manufacture of thin film integrated circuits, to enable, in one process, the removal of all the photoresist material from underlying metallic films without concomitant degradation of the metallic surface and in another process, preferential etching of silicon nitrides and oxides without significant simultaneous etching of single crystal silicon. The material is exposed to a low pressure (few torr) rf generated "cold" plasma, where the plasma is a homogeneous gaseous mixture of oxygen, a halogen containing compound and a noble gas.

Abstract: A transistor with its base-emitter bias controlled by a positive temperature coefficient thermistor provides a controlled heat source for maintaining precise temperature within a small oven which is used to contain and provide a stable temperature for temperature sensitive elements of external circuits.

Abstract: A flat meter assembly with a face displayed along one narrow end in edgewise fashion, the meter movement being mounted entirely in a molded frame and enclosed therein by a U-shaped top and bottom cover applied from the rear and a transparent face cover applied from the front, the two covers snapping together by integral fastenings. A series of lands and grooves along each side of the frame accept spring clips which are loaded by finger pressure and inserted between appropriate grooves and a mounting panel to secure the meter in place.

Abstract: A process step and material for use in the manufacture of semiconductor photomasks. To facilitate the etching of unmasked chromium, gold, and other metals capable of forming oxychloride derivatives on preselected portions of a substrate material, the material is exposed to a low pressure rf generated "cold" plasma (under 300.degree.C) produced from a homogeneous gaseous mixture of oxygen and a halogen containing compound.

Abstract: A organo-halide composition for use in the manufacture of semiconductor devices. To enable the removal of all the photoresist material along with its inorganic contamination, after development and etching of preselected portions of an oxide layer on a semiconductor slice, the material is exposed to a low pressure (few torr) rf generated "cold" plasma (200.degree.-300.degree.C), where the plasma is a homogeneous gaseous mixture of oxygen and organohalides. The organo-halide preferably is a binary or ternary mixture where each component preferably includes no more than two carbon atoms per molecule and is desirably fully halogensubstituted. One of the substituents should include predominantly chlorine, while the other should include a predominance of either fluorine or fluorine-bromine combinations.

Abstract: A process step for use in the manufacture of thin film integrated circuits, hybrid circuits and fine metallic mesh screens, to enable the removal of all organics and photoresist material from underlying metallic films without concomitant degradation of the metallic surface. After etching of preselected portions of an underlying critical metallic surface, the material is exposed to a low pressure (few torr) rf generated "cold" plasma, where the plasma is a homogeneous gaseous mixture of oxygen and nitrogen.

Abstract: A process step and material for use in the manufacture of semiconductor devices. To facilitate the etching of unmasked silicon dioxide, silicon nitride, silicon monoxide, bare silicon layers, or various refractory metals on preselected portions of a semiconductor slice, the material is exposed to a low pressure RF generated "cold" plasma (under 325.degree. C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon. The halocarbon is preferably a gas having one carbon atom per molecule and is preferably fully fluorine-substituted.

Abstract: A process step and material for use in the manufacture of semiconductor devices. To facilitate the removal of organic photoresist material from a substrate, the material is exposed to a low pressure rf generated "cold" plasma (under 32.degree. C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon, where the halocarbon is preferably a gas having one carbon atom per molecule and fully fluorine-substituted, and wherein the mixture contains at least 25% of oxygen by volume.