Patents Assigned to LG INNOTEK CO., LD.
  • SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME
    Publication number: 20140353684
    Abstract: A method for fabricating a silicon carbide epitaxial wafer according to the embodiment includes introducing a carbon source and a silicon source into a reactor in which a silicon carbide wafer is provided; heating the reactor; and adjusting an amount of the silicon source or the carbon source introduced into the reactor. A silicon carbide epitaxial wafer according to the embodiment includes a silicon carbide epitaxial layer having a surface roughness of 0.3 nm or less.
    Type: Application
    Filed: December 13, 2012
    Publication date: December 4, 2014
    Applicant: LG INNOTEK CO., LD.
    Inventor: Moo Seong Kim