Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate and a plurality of devices on the substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the substrate and the first nitride semiconductor layer, a third nitride semiconductor layer brought together with the second nitride semiconductor layer to form a second heterojunction interface, between the substrate and the second nitride semiconductor layer, and a first contact electrically connected to the first and second heterojunction interfaces.

Abstract: A lighting device includes a heat sink for dissipating heat from a light source. The heat sink is located between an inner case and an outer case, and a power controller is located in the inner case. The light source may include one or more light emitting diodes.

Abstract: A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conducti

Abstract: Provided is a light emitting device. The light emitting device includes a plurality of metal layers spaced from each other, a first insulation film having an opened area in which a portion of the plurality of metal layers is opened, the first insulation film being disposed around top surfaces of the plurality of metal layers, a light emitting chip disposed on at least one of the plurality of metal layers, the light emitting chip being electrically connected to the other metal layer, a resin layer disposed on the plurality of metal layers and the light emitting chip, and a first guide member formed of a non-metallic material, the first guide member being disposed on the first insulation film.

Abstract: Disclosed are a solar cell and a manufacturing method of the same. The solar cell includes a substrate; a back electrode layer on the substrate; a light absorbing layer including a second perforation hole on the back electrode layer; a window layer on the light absorbing layer; and a barrier layer between the substrate and the back electrode layer.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Abstract: A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion.

Abstract: A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.

Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer, and an electrode layer comprising a conductive polymer on the second conductive semiconductor layer.