Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad and a gate electrode on a substrate through a first mask process, forming a data line, a data pad, a source electrode, a drain electrode and an active layer on the substrate including the gate line, the gate pad and the gate electrode through a second mask process, wherein the data line crosses the gate line to define a pixel region, the source electrode is extended from the data line, the drain electrode is spaced apart from the source electrode, and the active layer is disposed between the gate electrode and the source and drain electrodes, forming a passivation layer on an entire surface of the substrate including the data line, the source electrode and the drain electrode through a third mask process, the passivation layer being etched to expose the substrate in the pixel region, a part of the drain electrode, the gate pad and the data pad, and forming a pixel electrode, a gate pad ter

Abstract: A method of preventing contaminating particles in a chamber in a deposition device is presented. In the method, a substrate is mounted within a chamber of gas-exposure equipment. The pressure within the chamber is reduced and a treatment gas is injected into the chamber to convert a surface of the substrate to be organic. After a desired time is elapsed, the pressure within the chamber is allowed increase to atmospheric pressure or above by introducing nitrogen gas into the chamber. Nitrogen gas introduction prevents entry of air, including the moisture within the air. Without the moisture, contaminating particles are not generated since the moisture is prevented from reacting with an ammonia component of the treatment gas.

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.