Patents Assigned to LG Siltron Inc.
  • METHOD FOR EVALUATING WAFER DEFECTS
    Publication number: 20140125374
    Abstract: Provided is a method for evaluating defects in a wafer. The method for evaluating the wafer defects includes preparing a wafer sample, forming an oxidation layer on the wafer sample, measuring a diffusion distance of a minority carrier using a surface photovoltage (SPV), and determining results of a contamination degree.
    Type: Application
    Filed: July 3, 2012
    Publication date: May 8, 2014
    Applicant: LG Siltron Inc.
    Inventor: Ho-Chan Ham
  • Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire single crystal ingot, sapphire single crystal ingot, and sapphire wafer
    Patent number: 8597756
    Abstract: Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: December 3, 2013
    Assignee: LG Siltron Inc.
    Inventors: Do Won Song, Young Hee Mun, Sang Hoon Lee, Seong Oh Jeong, Chang Youn Lee
  • Wafer support member, method for manufacturing the same and wafer polishing unit comprising the same
    Patent number: 8574033
    Abstract: Disclosed is a wafer support member including a base substrate, a support adhered at a predetermined width to the edge of the base substrate, the support having a round outermost part, and a coating layer provided on the outermost edge of the support.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: November 5, 2013
    Assignee: LG Siltron Inc.
    Inventor: Jae Chel Sung
  • Method for manufacturing gallium nitride wafer
    Patent number: 8354289
    Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: January 15, 2013
    Assignee: LG Siltron Inc.
    Inventors: Yong-Jin Kim, Dong-Kun Lee, Doo-Soo Kim, Ho-Jun Lee, Kye-Jin Lee