Abstract: A method for analyzing the shape of a wafer according to an embodiment comprises the steps of: acquiring a sectional image showing a wafer to be analyzed; finding a coordinate row of the surface contour of the wafer in the sectional image; and obtaining shape analysis data, including information about the shape of the wafer, using the coordinate row.

Abstract: The method of an embodiment includes the steps of: obtaining a first rocking curve with respect to a wafer obtained using an X-ray diffraction device; setting an X-ray incident angle range having a higher intensity than a reference level in the first rocking curve, calculating an inter-plane spacing for the set X-ray incident angle, calculating a strain value of the wafer using the calculated inter-plane spacing, and calculating sampled strain values on the basis of the calculated strain value; modeling a thickness according to the degree of damage of the wafer on the basis of the intensities of X-ray diffraction beams corresponding to the sampled strain values; obtaining a second rocking curve on the basis of the set X-ray incident angle range, the calculated inter-plane spacing, the sampled strain values and the modeled thickness; matching the second rocking curve to the first rocking curve by changing at least one of the X-ray incident angle range, the inter-plane spacing, the sampled strain values and the

Abstract: An embodiment relates to a wafer loading apparatus of wafer polishing equipment.

Abstract: A wafer polishing apparatus includes a lower surface plate, an upper surface plate disposed over the lower surface plate, a carrier disposed between the lower surface plate and the upper surface plate and containing a wafer, and a lift unit lifting the carrier such that an upper surface of the carrier contacts a lower surface of the upper surface plate or lowering the carrier such that a lower surface of the carrier contacts an upper surface of the lower surface plate.

Abstract: Disclosed is a wafer polishing apparatus including a base, a lower surface plate disposed on the upper surface of the base, an upper surface plate disposed on the lower surface plate and a first shape adjustment unit configured to deform the shape of the lower surface of the upper surface plate so that the lower surface of the upper surface plate has one of a concave shape, a flat shape and a convex shape in a first direction, and the first direction is a direction from the lower surface plate to the upper surface plate.

Abstract: Disclosed is a single-crystal growth apparatus including a chamber, a crucible provided in the chamber and configured to accommodate a melt that is a raw material for single-crystal growth, a heater disposed between the crucible and a side wall of the chamber and heating the crucible, and a crucible screen disposed on an upper end of the crucible, and the crucible screen has a bending member reflecting a radiant heat generated from the melt in the crucible to inside wall of the crucible.

Abstract: Disclosed is a wafer processing apparatus. The wafer processing apparatus includes a first surface plate on which a plurality of carriers is arranged, a first gear arranged at the central region of the first surface plate and engaged with the plurality of carriers, a second gear arranged around the edge region of the first surface plate and engaged with the plurality of carriers, a motor rotating the first surface plate in a first direction, a fixing hanger arranged opposite the first surface plate, and a second surface plate hung on the fixing hanger such that a clearance between the first surface plate and the second surface plate may be varied.

Abstract: Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.

Abstract: A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

Abstract: Disclosed is a slurry supply device including a nozzle configured to eject slurry, a slurry supply unit configured to receive the slurry from the nozzle and to discharge the slurry through at least one slurry hole, a receiving unit configured to allow the slurry supply unit to be mounted, inserted, seated, coupled, supported, or placed therein so as to enable discharge of the slurry from the slurry supply unit, the receiving unit being configured to receive a flowing material around the slurry supply unit and a slurry protection unit configured to enclose a space for passage of the slurry from an exit of the nozzle to an entrance of the slurry supply unit in conjunction with the flowing material.

Abstract: Disclosed is an ingot slicing wire guide around an outer face of which wires are wound. The guide has a first end and a second end opposite to the first end, and the outer face of the guide has a tilted face tilted at a predetermined angle in a direction from the first end to the second end.

Abstract: Provided are a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell includes stacking a solar cell device layer containing GaN on a sacrificial substrate, etching the solar cell device layer to expose the sacrificial substrate, thereby forming one or more solar cell devices comprising the solar cell device layer, anisotropically etching the exposed sacrificial substrate, contacting the solar cell devices to a stamping processor to remove the solar cell devices from the sacrificial substrate, and transferring the solar cell devices onto a receiving substrate. A high temperature semiconductor process may be performed on a substrate such as a silicon substrate to transfer the solar cell devices onto the substrate, thereby manufacturing flexible solar cells. Also, a large number of solar cells may be excellently aligned on a large area. In addition, economical solar cells may be manufactured.

Abstract: A cassette jig for a wafer cleaning apparatus is provided, comprising a jig body having an inner space designed to receive a first wafer therein; and a guide member mounted in the jig body and operative to guide a cassette to be installed in the jig body, the cassette having an inner space designed to receive a second wafer of a relatively smaller diameter than the first wafer therein.