Abstract: A method of forming a photonic device is described. The method comprises bonding an electro-optic structure onto a base wafer, wherein the electro-optic structure comprises a first insulator layer on a structure substrate and an electro-optic layer on the first insulator layer, and the base wafer comprises a base cladding layer on a base substrate, the electro-optic structure and the base wafer being bonded such that the electro-optic layer is between the first insulator layer and the base cladding layer.

Abstract: A coupling structure is presented, which comprises: a waveguide core layer supporting a guided mode and an active layer disposed above the waveguide core layer. In the coupling region, the guided mode is coupled to the active layer, and the active layer outside the coupling region is angled with respect to the active layer in the coupling region such that a distance between the waveguide core layer and the active layer gradually increases away from the coupling region.

Abstract: An optical mode-size converter is presented, which extends between a first plane to a second plane along a first path. The optical mode-size converter comprises: a plurality of dielectric strips within a coupling layer arranged to receive a beam with a first optical mode incident on the first plane, wherein the plurality of dielectric strips are coupled to each other in a first evanescent coupling region; and a first waveguide within a functional layer disposed above or below the coupling layer, the waveguide supporting a second optical mode and traversing the second plane. At least one of the plurality of dielectric strips is evanescently coupled to the first waveguide in a second evanescent coupling region. The first optical mode has a larger mode size than the second optical mode such that the converter is responsive to the first optical mode incident on the first plane to convert the first optical mode into the second optical mode in the first waveguide, along the first path towards the second plane.

Abstract: A structure for relieving mechanical stress is presented. The structure comprises: a substrate; an indentation formed in the substrate; and a photonic layer formed on the substrate.

Abstract: An electro-optic modulator for a waveguide is presented. The electro-optic modulator includes a first semiconductor layer, a second semiconductor layer, a dielectric layer interposed between the second semiconductor layer and the first semiconductor layer and a coupling layer for coupling a guided mode of the waveguide to at least one of the first semiconductor layer and the second semiconductor layer. The electro-optic modulator is configured to induce a modulation on the guided mode of the waveguide by changing a refractive index in response to a voltage applied between the first semiconductor layer and the second semiconductor layer.

Abstract: An optical mode-size converter is presented, which includes a guiding portion, wherein at least a portion of the guiding portion extends between a first end and a second end along a first path, a first strip with a first refractive index, and a second strip with a second refractive index. The first strip and the second strip are embedded within the guiding portion extending along the first path such that a first optical mode received at the first end reaches the first strip before the second strip and such that the second strip extends to the second end. The first refractive index and the second refractive index are higher than a refractive index of the guiding portion, and a section of the first strip and a section of the second strip overlap to form an evanescent coupling region, such that converter is responsive to a first optical mode received at the first end to convert the first optical mode into a second optical mode with a smaller mode size along the first path towards the second end.