Patents Assigned to Lightwave Photonics, Inc.
  • III-Nitride light-emitting devices with reflective engineered growth templates and manufacturing method
    Patent number: 8890183
    Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: November 18, 2014
    Assignee: Lightwave Photonics, Inc.
    Inventor: Robbie J. Jorgenson
  • Method of forming current-injecting/tunneling light-emitting device
    Patent number: 8865492
    Abstract: An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: October 21, 2014
    Assignee: Lightwave Photonics, Inc.
    Inventors: Robbie J. Jorgenson, David J. King
  • III-nitride light-emitting devices with reflective engineered growth templates and methods of manufacture
    Patent number: 8253157
    Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: August 28, 2012
    Assignee: Lightwave Photonics, Inc.
    Inventor: Robbie J. Jorgenson
  • III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
    Patent number: 7915624
    Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
    Type: Grant
    Filed: August 3, 2007
    Date of Patent: March 29, 2011
    Assignee: Lightwave Photonics, Inc.
    Inventor: Robbie J. Jorgenson
  • Current-injecting/tunneling light-emitting device and method
    Patent number: 7842939
    Abstract: An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: November 30, 2010
    Assignee: Lightwave Photonics, Inc.
    Inventors: Robbie J. Jorgenson, David J. King