Abstract: A shallow trench isolation layer is formed on a structure comprising semiconductor fins. Portions of the fins are recessed to a level below the shallow trench isolation layer. Epitaxial stressor regions are then formed on the recessed fin areas. A bottom portion of the epitaxial stressor regions are contained by the shallow trench isolation layer, which delays formation of the diamond shape as the epitaxial region is grown. Once the epitaxial stressor regions exceed the level of the shallow trench isolation layer, the diamond shape starts to form. The result of delaying the start of the diamond growth pattern is that the epitaxial regions are narrower for a given fin height. This allows for taller fins, which provide more current handling capacity, while the narrower epitaxial stressor regions enable a smaller fin pitch, allowing for increased circuit density.

Abstract: A method of evaluating digital content displayed on an electronic tabletop device includes receiving a plurality of non-intentional signals generated in response to a plurality of users interacting with at least one of the digital content displayed on the electronic tabletop device and each other, classifying the plurality of non-intentional signals into a first set of data including user-specific non-intentional signals and a second set of data including collaborative non-intentional signals, correlating the plurality of non-intentional signals to user profiles corresponding to the plurality of users, and generating an evaluation report including information indicating a collaborative quality of the digital content based on the plurality of non-intentional signals and a correlation of the plurality of non-intentional signals to the user profiles.

Abstract: A method of performing a search of heterogeneous data based on an input query includes: generating an index including at least two hash tables, where each hash table corresponds to a different data domain of the heterogeneous data and includes hash code sets, where at least one of the hash code sets is mapped to a hash code set of another one of the tables. The method further includes performing a hash on the input query to generate a hash code, by referring to the index, determining a first hash code set that the generated hash code belongs to, and determining a second hash code set that the determined first hash code set is mapped to, and providing at least one result based on the determined second hash code set.

Abstract: A method includes providing a structure having a substrate, a first insulating layer on the substrate, a first semiconductor material layer on the first insulating layer, a second insulating layer on the first semiconductor layer in a first portion of the structure and a second semiconductor layer of a second, different semiconductor material on the second insulating layer in the first portion. The method further includes growing additional first semiconductor material on the first semiconductor layer in a second portion of the structure forming a regrown semiconductor layer; forming first fins in the regrown semiconductor layer and second fins in the second semiconductor layer; and forming gate structures upon the first and second fins. A height difference, relative to a surface of the first insulating layer, of the gate structures formed upon the first fins and the gate structures formed upon the second fins is less than a predetermined value.

Abstract: A method for forming magnetic conductors includes forming a metal structure on a substrate. Plating surfaces are prepared on the metal structure for electroless plating by at least one of: masking surfaces of the metal structure to prevent electroless plating on masked surfaces and/or activating a surface of the metal structure. Magnetic material is electrolessly plated directly on the plating surfaces to form a metal and magnetic material structure.

Abstract: A method comprises providing a base substrate having a surface; disposing layers of III-V semiconductor material on the surface of the base substrate using a chemical vapor deposition technique or a molecular beam epitaxy technique; disposing a stressor layer on the layer of III-V semiconductor material; operatively associating a flexible handle substrate with the stressor layer; and using controlled spalling to separate the layer of III-V semiconductor material from the base substrate to expose a surface of the layer of III-V semiconductor material.

Abstract: Apparatus and methods are provided for controlling the loading status of DLLs. Specifically, a streaming program compiler is provided. The compiler includes operation modules for calling DLLs during streaming program execution; association table generating units for generating association tables according to user-defined rules, where the association table includes entries indicating (i) stream branches of the streaming program and (ii) an operation module corresponding to the stream branches; and a trigger generating unit for generating a trigger based on user-defined rules, where the trigger generating unit (i) determines which conditions for loading and unloading DLLs fit the streaming program, (ii) matches these conditions to a particular stream branch to identify a matched stream branch, and (iii) sends out triggering signals indicating the matched stream branch. This invention also provides a corresponding method and controller.

Abstract: A method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing raised source/drain regions on the source/drain regions, the grown raised source/drain regions including III-V semiconductor material, and growing metal contacts on the grown raised source/drain regions. Another method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing metal contacts on the source/drain regions.

Abstract: To realize quick adaptation to a communication link between a transmitter and a receiver by using two different frequency carriers. A receiver detects a preamble from a transmission bit string. When determining that a total sum of the number of modified bits exceeds a certain threshold in a range of a payload following the preamble (when detecting that a reception state of a communication link has been degraded), the receiver issues, to a transmitter, a request for changing a transmission parameter (four parameters may be used for enhancement/lowering) for the transmission bit string by using a communication link, which is a relatively-low-frequency carrier. On the other hand, the transmitter receives the request for change, and executes the request for changing the transmission parameter for the transmission bit string while maintaining transmission of a payload in the transmission bit string.

Abstract: A method is provided for reducing size of memory required for a switching node's forwarding table by employing forwarding tables of different types to map received data packets addressed to downstream nodes and upstream nodes to appropriate output ports of the switching node. The method includes receiving a data packet at a data transfer node of a network and selecting a forwarding table from multiple types of forwarding tables accessible by the node based on an attribute associated with the received data packet, and mapping the data packet to an output port of the node utilizing the forwarding table selected from the multiple types of forwarding tables based on the attribute associated with the packet.

Abstract: A process of silylation of object surfaces using a mixture of a silylation agent in admixture with an inert liquified gas, such as carbon dioxide.